JPS58176964A - 相補型ｍｏｓ半導体装置の製造方法 - Google Patents

相補型ｍｏｓ半導体装置の製造方法

Info

Publication number
JPS58176964A
JPS58176964A JP57060545A JP6054582A JPS58176964A JP S58176964 A JPS58176964 A JP S58176964A JP 57060545 A JP57060545 A JP 57060545A JP 6054582 A JP6054582 A JP 6054582A JP S58176964 A JPS58176964 A JP S58176964A
Authority
JP
Japan
Prior art keywords
material layer
oxidizable
semiconductor material
island
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57060545A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6244862B2 (enExample
Inventor
Hiroshi Nozawa
野沢　博
Junichi Matsunaga
松永　準一
Hisahiro Matsukawa
尚弘 松川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57060545A priority Critical patent/JPS58176964A/ja
Publication of JPS58176964A publication Critical patent/JPS58176964A/ja
Publication of JPS6244862B2 publication Critical patent/JPS6244862B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS

Landscapes

  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57060545A 1982-04-12 1982-04-12 相補型ｍｏｓ半導体装置の製造方法 Granted JPS58176964A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57060545A JPS58176964A (ja) 1982-04-12 1982-04-12 相補型ｍｏｓ半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57060545A JPS58176964A (ja) 1982-04-12 1982-04-12 相補型ｍｏｓ半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58176964A true JPS58176964A (ja) 1983-10-17
JPS6244862B2 JPS6244862B2 (enExample) 1987-09-22

Family

ID=13145359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57060545A Granted JPS58176964A (ja) 1982-04-12 1982-04-12 相補型ｍｏｓ半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58176964A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6113662A (ja) * 1984-06-28 1986-01-21 Nippon Telegr & Teleph Corp <Ntt> 相補形ｍｉｓトランジスタ装置及びその製法
JPS63117460A (ja) * 1986-11-05 1988-05-21 Nec Corp 半導体集積回路装置の製造方法
JPH01183145A (ja) * 1988-01-18 1989-07-20 Fujitsu Ltd Ｓｏｉ半導体装置の製造方法
JP2002043532A (ja) * 2000-07-31 2002-02-08 Rohm Co Ltd 半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6113662A (ja) * 1984-06-28 1986-01-21 Nippon Telegr & Teleph Corp <Ntt> 相補形ｍｉｓトランジスタ装置及びその製法
JPS63117460A (ja) * 1986-11-05 1988-05-21 Nec Corp 半導体集積回路装置の製造方法
JPH01183145A (ja) * 1988-01-18 1989-07-20 Fujitsu Ltd Ｓｏｉ半導体装置の製造方法
JP2002043532A (ja) * 2000-07-31 2002-02-08 Rohm Co Ltd 半導体装置

Also Published As

Publication number Publication date
JPS6244862B2 (enExample) 1987-09-22

Similar Documents

Publication Publication Date Title
JPH0355984B2 (enExample)
JPH0638479B2 (ja) Ｃｍｏｓ集積回路技法
JPS63219152A (ja) Ｍｏｓ集積回路の製造方法
JP2672607B2 (ja) 半導体装置の製造方法
JPS58176964A (ja) 相補型ｍｏｓ半導体装置の製造方法
JPS62104051A (ja) 集積回路のアイソレ−シヨン構造およびその形成方法
JPS60117765A (ja) 半導体装置の製造方法
JP3097095B2 (ja) 半導体装置の製造方法
JPS6092653A (ja) 半導体集積回路装置
JPS60144950A (ja) 半導体装置の製造方法
JPH0481336B2 (enExample)
JPS5856460A (ja) 半導体装置の製造方法
JPS63311723A (ja) 半導体集積回路の製造方法
JPS6155965A (ja) 不揮発性半導体記憶装置の製造方法
JPS62244163A (ja) 半導体装置
JPS62188359A (ja) 相補型ｍｏｓ半導体装置の製造方法
JPS58169971A (ja) 半導体装置およびその製造方法
JP2915040B2 (ja) 半導体装置の製造方法
JPS5914900B2 (ja) 半導体装置の製造方法
JPS6074664A (ja) 相補型ｍｏｓ半導体装置の製造方法
JPS6030168A (ja) 相補型ｍｏｓ半導体装置及びその製造方法
JPS5834975A (ja) 絶縁ゲ−ト型電界効果半導体装置
JPS5974673A (ja) 半導体装置の製造方法
JPH0722187B2 (ja) 半導体装置の製造方法
JPH0231467A (ja) 不揮発性半導体記億装置の製造方法