JPS58169910A - 微細パタ−ン形成方法 - Google Patents
微細パタ−ン形成方法Info
- Publication number
- JPS58169910A JPS58169910A JP5210882A JP5210882A JPS58169910A JP S58169910 A JPS58169910 A JP S58169910A JP 5210882 A JP5210882 A JP 5210882A JP 5210882 A JP5210882 A JP 5210882A JP S58169910 A JPS58169910 A JP S58169910A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photoresist
- metal
- photoresist layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5210882A JPS58169910A (ja) | 1982-03-30 | 1982-03-30 | 微細パタ−ン形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5210882A JPS58169910A (ja) | 1982-03-30 | 1982-03-30 | 微細パタ−ン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58169910A true JPS58169910A (ja) | 1983-10-06 |
JPH0348650B2 JPH0348650B2 (enrdf_load_stackoverflow) | 1991-07-25 |
Family
ID=12905661
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5210882A Granted JPS58169910A (ja) | 1982-03-30 | 1982-03-30 | 微細パタ−ン形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58169910A (enrdf_load_stackoverflow) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5248468A (en) * | 1975-10-15 | 1977-04-18 | Nec Home Electronics Ltd | Process for production of semiconductor device |
JPS5339864A (en) * | 1976-09-24 | 1978-04-12 | Nec Corp | Production of semiconductor element electrode |
JPS58130521A (ja) * | 1982-01-29 | 1983-08-04 | Toshiba Corp | 金属パタ−ン形成方法 |
JPS58151023A (ja) * | 1982-03-02 | 1983-09-08 | Nippon Telegr & Teleph Corp <Ntt> | 多層よりなるレジスト層の形成方法 |
-
1982
- 1982-03-30 JP JP5210882A patent/JPS58169910A/ja active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5248468A (en) * | 1975-10-15 | 1977-04-18 | Nec Home Electronics Ltd | Process for production of semiconductor device |
JPS5339864A (en) * | 1976-09-24 | 1978-04-12 | Nec Corp | Production of semiconductor element electrode |
JPS58130521A (ja) * | 1982-01-29 | 1983-08-04 | Toshiba Corp | 金属パタ−ン形成方法 |
JPS58151023A (ja) * | 1982-03-02 | 1983-09-08 | Nippon Telegr & Teleph Corp <Ntt> | 多層よりなるレジスト層の形成方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0348650B2 (enrdf_load_stackoverflow) | 1991-07-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4218532A (en) | Photolithographic technique for depositing thin films | |
CN115915907A (zh) | 一种超导量子芯片制备方法及超导量子芯片 | |
JPS58169910A (ja) | 微細パタ−ン形成方法 | |
JP3858312B2 (ja) | 表面弾性波素子およびその製造方法 | |
JPH1154460A (ja) | 電導性構造を製造する方法 | |
JP2516968B2 (ja) | 二層構造電子線レジスト用平坦化材料 | |
JP2531608B2 (ja) | 半導体装置の製造方法 | |
JPS5925370B2 (ja) | 半導体装置の製造方法 | |
JPH01269941A (ja) | 微細パターンの形成方法 | |
JPS604221A (ja) | 半導体装置の製造方法 | |
JPS6141445B2 (enrdf_load_stackoverflow) | ||
JPS5950053B2 (ja) | 写真蝕刻方法 | |
JPH03110835A (ja) | 半導体装置の製造方法 | |
JPS58114428A (ja) | 微細パタ−ン形成方法 | |
JPH0246738A (ja) | 微細電極の形成法 | |
JPS6028237A (ja) | 半導体装置の製造方法 | |
JPS62200732A (ja) | 半導体装置の製造方法 | |
JPS60120526A (ja) | 微細パタン形成法 | |
JPS6153849B2 (enrdf_load_stackoverflow) | ||
JPS61256729A (ja) | 導体パタ−ンの形成方法 | |
JPH07142951A (ja) | 弾性表面波デバイスの製造方法 | |
JPS594016A (ja) | ハ−ド基板 | |
JPS6359540B2 (enrdf_load_stackoverflow) | ||
JPS58145126A (ja) | 半導体装置の製造方法 | |
JPH01220441A (ja) | チャージアップ防止方法 |