JPH0348650B2 - - Google Patents
Info
- Publication number
- JPH0348650B2 JPH0348650B2 JP57052108A JP5210882A JPH0348650B2 JP H0348650 B2 JPH0348650 B2 JP H0348650B2 JP 57052108 A JP57052108 A JP 57052108A JP 5210882 A JP5210882 A JP 5210882A JP H0348650 B2 JPH0348650 B2 JP H0348650B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- layer
- metal
- substrate
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5210882A JPS58169910A (ja) | 1982-03-30 | 1982-03-30 | 微細パタ−ン形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5210882A JPS58169910A (ja) | 1982-03-30 | 1982-03-30 | 微細パタ−ン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58169910A JPS58169910A (ja) | 1983-10-06 |
JPH0348650B2 true JPH0348650B2 (enrdf_load_stackoverflow) | 1991-07-25 |
Family
ID=12905661
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5210882A Granted JPS58169910A (ja) | 1982-03-30 | 1982-03-30 | 微細パタ−ン形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58169910A (enrdf_load_stackoverflow) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5248468A (en) * | 1975-10-15 | 1977-04-18 | Nec Home Electronics Ltd | Process for production of semiconductor device |
JPS5339864A (en) * | 1976-09-24 | 1978-04-12 | Nec Corp | Production of semiconductor element electrode |
JPS58130521A (ja) * | 1982-01-29 | 1983-08-04 | Toshiba Corp | 金属パタ−ン形成方法 |
JPS58151023A (ja) * | 1982-03-02 | 1983-09-08 | Nippon Telegr & Teleph Corp <Ntt> | 多層よりなるレジスト層の形成方法 |
-
1982
- 1982-03-30 JP JP5210882A patent/JPS58169910A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58169910A (ja) | 1983-10-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4165395A (en) | Process for forming a high aspect ratio structure by successive exposures with electron beam and actinic radiation | |
US4202914A (en) | Method of depositing thin films of small dimensions utilizing silicon nitride lift-off mask | |
JPS6323657B2 (enrdf_load_stackoverflow) | ||
JPS62142323A (ja) | X線ホトリソグラフイに使用するマスクの加法的方法及びその結果得られるマスク | |
JPH0348650B2 (enrdf_load_stackoverflow) | ||
JPH1154460A (ja) | 電導性構造を製造する方法 | |
JP2531608B2 (ja) | 半導体装置の製造方法 | |
JPH0314172B2 (enrdf_load_stackoverflow) | ||
JPS5925370B2 (ja) | 半導体装置の製造方法 | |
JPH041492B2 (enrdf_load_stackoverflow) | ||
JPS5950053B2 (ja) | 写真蝕刻方法 | |
JPS594857B2 (ja) | 半導体装置の電極、配線層形成方法 | |
JP2583986B2 (ja) | レジストパターンの形成方法 | |
JPS5892224A (ja) | パタ−ン形成方法 | |
JPS5856422A (ja) | パタ−ン形成法 | |
JPS60120526A (ja) | 微細パタン形成法 | |
JPS60231331A (ja) | リフトオフ・パタ−ンの形成方法 | |
JPH0748468B2 (ja) | パタ−ン形成方法 | |
JPS594858B2 (ja) | 半導体装置の電極,配線層形成方法 | |
JPS5934632A (ja) | X線マスクの製造方法 | |
JPS61150326A (ja) | 半導体装置の製造方法 | |
JPS594016A (ja) | ハ−ド基板 | |
JPS58100428A (ja) | パタ−ン形成方法 | |
JPH0484430A (ja) | 半導体装置の製造方法 | |
JPH06104166A (ja) | パターン形成方法 |