JPS58158978A - 半導体受光素子 - Google Patents

半導体受光素子

Info

Publication number
JPS58158978A
JPS58158978A JP57041318A JP4131882A JPS58158978A JP S58158978 A JPS58158978 A JP S58158978A JP 57041318 A JP57041318 A JP 57041318A JP 4131882 A JP4131882 A JP 4131882A JP S58158978 A JPS58158978 A JP S58158978A
Authority
JP
Japan
Prior art keywords
layer
substrate
semi
insulating
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57041318A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0241185B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Kanbe
神戸　宏
Susumu Hata
進 秦
Haruo Nagai
治男 永井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57041318A priority Critical patent/JPS58158978A/ja
Publication of JPS58158978A publication Critical patent/JPS58158978A/ja
Publication of JPH0241185B2 publication Critical patent/JPH0241185B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures

Landscapes

  • Light Receiving Elements (AREA)
JP57041318A 1982-03-16 1982-03-16 半導体受光素子 Granted JPS58158978A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57041318A JPS58158978A (ja) 1982-03-16 1982-03-16 半導体受光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57041318A JPS58158978A (ja) 1982-03-16 1982-03-16 半導体受光素子

Publications (2)

Publication Number Publication Date
JPS58158978A true JPS58158978A (ja) 1983-09-21
JPH0241185B2 JPH0241185B2 (enrdf_load_stackoverflow) 1990-09-14

Family

ID=12605158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57041318A Granted JPS58158978A (ja) 1982-03-16 1982-03-16 半導体受光素子

Country Status (1)

Country Link
JP (1) JPS58158978A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009300206A (ja) * 2008-06-12 2009-12-24 Murata Mfg Co Ltd 紫外線センサ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55124278A (en) * 1979-03-20 1980-09-25 Nippon Telegr & Teleph Corp <Ntt> Avalanche photodiode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55124278A (en) * 1979-03-20 1980-09-25 Nippon Telegr & Teleph Corp <Ntt> Avalanche photodiode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009300206A (ja) * 2008-06-12 2009-12-24 Murata Mfg Co Ltd 紫外線センサ

Also Published As

Publication number Publication date
JPH0241185B2 (enrdf_load_stackoverflow) 1990-09-14

Similar Documents

Publication Publication Date Title
JPH02159775A (ja) 半導体受光素子及びその製造方法
JPH02202071A (ja) 半導体受光素子及びその製造方法
JPS6058686A (ja) 光検出器及びその製造方法
US4429397A (en) Buried heterostructure laser diode
JPS58158978A (ja) 半導体受光素子
JPH10209486A (ja) 半導体受光装置及びその製造方法
JP2793238B2 (ja) 半導体受光装置及びその製造方法
JPS61144076A (ja) 半導体受光素子
JPS6138872B2 (enrdf_load_stackoverflow)
JPS6248079A (ja) 半導体受光素子
JP3074574B2 (ja) 半導体受光素子の製造方法
JP3055030B2 (ja) アバランシェ・フォトダイオードの製造方法
JPS59148382A (ja) 注入形レ−ザの製造方法
JPS632389A (ja) 半導体受光装置の製造方法
JPH0621503A (ja) 半導体光検出装置とその製造方法
JPS6259907B2 (enrdf_load_stackoverflow)
JPH02139975A (ja) 半導体受光素子の製造方法
JPS6328349B2 (enrdf_load_stackoverflow)
JP2670525B2 (ja) 受光素子およびその製造方法
JPS5871677A (ja) ２波長埋め込みへテロ構造半導体レ−ザ
JPH0215680A (ja) 半導体受光装置
JPS6222475B2 (enrdf_load_stackoverflow)
JPS58108778A (ja) 受光素子
JPS5830166A (ja) 半導体受光素子の製造方法
JPH08111564A (ja) 半導体素子とその製造方法