JPS6259907B2 - - Google Patents

Info

Publication number
JPS6259907B2
JPS6259907B2 JP57090802A JP9080282A JPS6259907B2 JP S6259907 B2 JPS6259907 B2 JP S6259907B2 JP 57090802 A JP57090802 A JP 57090802A JP 9080282 A JP9080282 A JP 9080282A JP S6259907 B2 JPS6259907 B2 JP S6259907B2
Authority
JP
Japan
Prior art keywords
type
layer
inp
inp layer
ingaasp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57090802A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58206178A (ja
Inventor
Susumu Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57090802A priority Critical patent/JPS58206178A/ja
Publication of JPS58206178A publication Critical patent/JPS58206178A/ja
Publication of JPS6259907B2 publication Critical patent/JPS6259907B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures

Landscapes

  • Light Receiving Elements (AREA)
JP57090802A 1982-05-27 1982-05-27 半導体受光装置の製造方法 Granted JPS58206178A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57090802A JPS58206178A (ja) 1982-05-27 1982-05-27 半導体受光装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57090802A JPS58206178A (ja) 1982-05-27 1982-05-27 半導体受光装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58206178A JPS58206178A (ja) 1983-12-01
JPS6259907B2 true JPS6259907B2 (enrdf_load_stackoverflow) 1987-12-14

Family

ID=14008715

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57090802A Granted JPS58206178A (ja) 1982-05-27 1982-05-27 半導体受光装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58206178A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60173880A (ja) * 1984-02-20 1985-09-07 Nec Corp 半導体受光素子およびその製造方法
CA1280196C (en) * 1987-07-17 1991-02-12 Paul Perry Webb Avanlanche photodiode

Also Published As

Publication number Publication date
JPS58206178A (ja) 1983-12-01

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