JPS58153375A - 半導体素子の製造方法 - Google Patents
半導体素子の製造方法Info
- Publication number
- JPS58153375A JPS58153375A JP57035042A JP3504282A JPS58153375A JP S58153375 A JPS58153375 A JP S58153375A JP 57035042 A JP57035042 A JP 57035042A JP 3504282 A JP3504282 A JP 3504282A JP S58153375 A JPS58153375 A JP S58153375A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- resist pattern
- electrode
- source
- insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10D64/011—
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57035042A JPS58153375A (ja) | 1982-03-08 | 1982-03-08 | 半導体素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57035042A JPS58153375A (ja) | 1982-03-08 | 1982-03-08 | 半導体素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58153375A true JPS58153375A (ja) | 1983-09-12 |
| JPS6262071B2 JPS6262071B2 (OSRAM) | 1987-12-24 |
Family
ID=12430978
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57035042A Granted JPS58153375A (ja) | 1982-03-08 | 1982-03-08 | 半導体素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58153375A (OSRAM) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01133375A (ja) * | 1987-09-23 | 1989-05-25 | Siemens Ag | 自己整合ゲートを備えるmesfetの製造方法 |
| US6627496B1 (en) | 1998-08-13 | 2003-09-30 | Infineon Technologies Ag | Process for producing structured layers, process for producing components of an integrated circuit, and process for producing a memory configuration |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55105326A (en) * | 1979-02-07 | 1980-08-12 | Matsushita Electronics Corp | Manufacturing method of electrode of semiconductor device |
| JPS5623783A (en) * | 1979-08-01 | 1981-03-06 | Matsushita Electronics Corp | Formation of electrode for semiconductor device |
-
1982
- 1982-03-08 JP JP57035042A patent/JPS58153375A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55105326A (en) * | 1979-02-07 | 1980-08-12 | Matsushita Electronics Corp | Manufacturing method of electrode of semiconductor device |
| JPS5623783A (en) * | 1979-08-01 | 1981-03-06 | Matsushita Electronics Corp | Formation of electrode for semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01133375A (ja) * | 1987-09-23 | 1989-05-25 | Siemens Ag | 自己整合ゲートを備えるmesfetの製造方法 |
| US6627496B1 (en) | 1998-08-13 | 2003-09-30 | Infineon Technologies Ag | Process for producing structured layers, process for producing components of an integrated circuit, and process for producing a memory configuration |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6262071B2 (OSRAM) | 1987-12-24 |
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