JPS58153368A - 絶縁ゲ−ト型電界効果トランジスタ - Google Patents

絶縁ゲ−ト型電界効果トランジスタ

Info

Publication number
JPS58153368A
JPS58153368A JP57035802A JP3580282A JPS58153368A JP S58153368 A JPS58153368 A JP S58153368A JP 57035802 A JP57035802 A JP 57035802A JP 3580282 A JP3580282 A JP 3580282A JP S58153368 A JPS58153368 A JP S58153368A
Authority
JP
Japan
Prior art keywords
region
effect transistor
insulated gate
diffusion
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57035802A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0456473B2 (en:Method
Inventor
Tamotsu Ohata
大畑　有
Takeshi Kuramoto
倉本　毅
Hirohito Tanabe
田辺　博仁
Yukinobu Miwa
三輪　行信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57035802A priority Critical patent/JPS58153368A/ja
Publication of JPS58153368A publication Critical patent/JPS58153368A/ja
Publication of JPH0456473B2 publication Critical patent/JPH0456473B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/153—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
JP57035802A 1982-03-09 1982-03-09 絶縁ゲ−ト型電界効果トランジスタ Granted JPS58153368A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57035802A JPS58153368A (ja) 1982-03-09 1982-03-09 絶縁ゲ−ト型電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57035802A JPS58153368A (ja) 1982-03-09 1982-03-09 絶縁ゲ−ト型電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS58153368A true JPS58153368A (ja) 1983-09-12
JPH0456473B2 JPH0456473B2 (en:Method) 1992-09-08

Family

ID=12452045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57035802A Granted JPS58153368A (ja) 1982-03-09 1982-03-09 絶縁ゲ−ト型電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS58153368A (en:Method)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5950561A (ja) * 1982-09-17 1984-03-23 Hitachi Ltd 半導体集積回路装置
US4680604A (en) * 1984-03-19 1987-07-14 Kabushiki Kaisha Toshiba Conductivity modulated MOS transistor device
JPH01128576A (ja) * 1987-11-13 1989-05-22 Matsushita Electron Corp 縦型ｍｏｓ電界効果トランジスタ
JPH01164068A (ja) * 1987-12-21 1989-06-28 Hitachi Ltd 半導体装置
JPH0268966A (ja) * 1988-09-02 1990-03-08 Mitsubishi Electric Corp 電界効果型半導体装置
WO1991011826A1 (en) * 1990-02-01 1991-08-08 Quigg Fred L Mosfet structure having reduced gate capacitance and method of forming same
US5045901A (en) * 1988-10-03 1991-09-03 Mitsubishi Denki Kabushiki Kaisha Double diffusion metal-oxide-semiconductor device having shallow source and drain diffused regions
US5121176A (en) * 1990-02-01 1992-06-09 Quigg Fred L MOSFET structure having reduced gate capacitance
US5179032A (en) * 1990-02-01 1993-01-12 Quigg Fred L Mosfet structure having reduced capacitance and method of forming same
JP2018032863A (ja) * 2017-09-21 2018-03-01 株式会社パウデック 絶縁ゲート型電界効果トランジスタ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5673472A (en) * 1979-10-30 1981-06-18 Rca Corp Longitudinal mosfet device
JPS57134855U (en:Method) * 1981-02-17 1982-08-23

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5673472A (en) * 1979-10-30 1981-06-18 Rca Corp Longitudinal mosfet device
JPS57134855U (en:Method) * 1981-02-17 1982-08-23

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5950561A (ja) * 1982-09-17 1984-03-23 Hitachi Ltd 半導体集積回路装置
US4680604A (en) * 1984-03-19 1987-07-14 Kabushiki Kaisha Toshiba Conductivity modulated MOS transistor device
USRE32784E (en) * 1984-03-19 1988-11-15 Kabushiki Kaisha Toshiba Conductivity modulated MOS transistor device
JPH01128576A (ja) * 1987-11-13 1989-05-22 Matsushita Electron Corp 縦型ｍｏｓ電界効果トランジスタ
JPH01164068A (ja) * 1987-12-21 1989-06-28 Hitachi Ltd 半導体装置
JPH0268966A (ja) * 1988-09-02 1990-03-08 Mitsubishi Electric Corp 電界効果型半導体装置
US5045901A (en) * 1988-10-03 1991-09-03 Mitsubishi Denki Kabushiki Kaisha Double diffusion metal-oxide-semiconductor device having shallow source and drain diffused regions
WO1991011826A1 (en) * 1990-02-01 1991-08-08 Quigg Fred L Mosfet structure having reduced gate capacitance and method of forming same
US5121176A (en) * 1990-02-01 1992-06-09 Quigg Fred L MOSFET structure having reduced gate capacitance
US5179032A (en) * 1990-02-01 1993-01-12 Quigg Fred L Mosfet structure having reduced capacitance and method of forming same
JP2018032863A (ja) * 2017-09-21 2018-03-01 株式会社パウデック 絶縁ゲート型電界効果トランジスタ

Also Published As

Publication number Publication date
JPH0456473B2 (en:Method) 1992-09-08

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