JPS58135628A - 化合物半導体薄膜構造体の製造方法 - Google Patents

化合物半導体薄膜構造体の製造方法

Info

Publication number
JPS58135628A
JPS58135628A JP57018374A JP1837482A JPS58135628A JP S58135628 A JPS58135628 A JP S58135628A JP 57018374 A JP57018374 A JP 57018374A JP 1837482 A JP1837482 A JP 1837482A JP S58135628 A JPS58135628 A JP S58135628A
Authority
JP
Japan
Prior art keywords
thin film
compound semiconductor
substrate
semiconductor thin
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57018374A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0419699B2 (enrdf_load_stackoverflow
Inventor
Keiji Kuboyama
久保山　啓治
Takeki Matsui
雄毅 松居
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Corp
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Chemical Industry Co Ltd
Asahi Kasei Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Industry Co Ltd, Asahi Kasei Kogyo KK filed Critical Asahi Chemical Industry Co Ltd
Priority to JP57018374A priority Critical patent/JPS58135628A/ja
Publication of JPS58135628A publication Critical patent/JPS58135628A/ja
Publication of JPH0419699B2 publication Critical patent/JPH0419699B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Hall/Mr Elements (AREA)
  • Recrystallisation Techniques (AREA)
JP57018374A 1982-02-08 1982-02-08 化合物半導体薄膜構造体の製造方法 Granted JPS58135628A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57018374A JPS58135628A (ja) 1982-02-08 1982-02-08 化合物半導体薄膜構造体の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57018374A JPS58135628A (ja) 1982-02-08 1982-02-08 化合物半導体薄膜構造体の製造方法

Publications (2)

Publication Number Publication Date
JPS58135628A true JPS58135628A (ja) 1983-08-12
JPH0419699B2 JPH0419699B2 (enrdf_load_stackoverflow) 1992-03-31

Family

ID=11969931

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57018374A Granted JPS58135628A (ja) 1982-02-08 1982-02-08 化合物半導体薄膜構造体の製造方法

Country Status (1)

Country Link
JP (1) JPS58135628A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0371862A3 (en) * 1988-11-29 1990-11-22 The University Of North Carolina At Chapel Hill Method of forming a nonsilicon semiconductor on insulator structure
JP2009533845A (ja) * 2006-04-07 2009-09-17 バルサチリス・エルエルシー 結晶ドナーからへき開されたドニー層を使用して厚膜および薄膜デバイスを製造するシステムおよび方法
JP2009224769A (ja) * 2008-02-18 2009-10-01 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
CN112687799A (zh) * 2020-12-19 2021-04-20 复旦大学 一种高结晶度半导体膜转移制造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4894368A (enrdf_load_stackoverflow) * 1972-03-13 1973-12-05

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4894368A (enrdf_load_stackoverflow) * 1972-03-13 1973-12-05

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0371862A3 (en) * 1988-11-29 1990-11-22 The University Of North Carolina At Chapel Hill Method of forming a nonsilicon semiconductor on insulator structure
JP2009533845A (ja) * 2006-04-07 2009-09-17 バルサチリス・エルエルシー 結晶ドナーからへき開されたドニー層を使用して厚膜および薄膜デバイスを製造するシステムおよび方法
JP2009224769A (ja) * 2008-02-18 2009-10-01 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
CN112687799A (zh) * 2020-12-19 2021-04-20 复旦大学 一种高结晶度半导体膜转移制造方法
CN112687799B (zh) * 2020-12-19 2022-10-11 复旦大学 一种高结晶度半导体膜转移制造方法

Also Published As

Publication number Publication date
JPH0419699B2 (enrdf_load_stackoverflow) 1992-03-31

Similar Documents

Publication Publication Date Title
JPS62216352A (ja) 半導体装置の製造方法
JPH03133176A (ja) 炭化珪素半導体装置およびその製造方法
JPS58135628A (ja) 化合物半導体薄膜構造体の製造方法
US3898359A (en) Thin film magneto-resistors and methods of making same
JPS58175833A (ja) 化合物半導体薄膜構造体の製造法
JPS59111321A (ja) 化合物半導体薄膜構造体及びその製造方法
JP2854038B2 (ja) 半導体素子
JP3158588B2 (ja) ＩｎＳｂ薄膜の転写形成方法
Jefkins Stress in silicon films deposited heteroepitaxially on insulating substrates with particular reference to corundum
JP3180378B2 (ja) 半導体薄膜の製造方法および半導体磁気抵抗素子の製造方法
JPS6126211A (ja) 半導体結晶成長方法
JPS5925245A (ja) 半導体装置の製造方法
JPH01305579A (ja) 半導体素子製造用超電導セラミック薄膜形成単結晶ウエハー材
JP2747490B2 (ja) 酸化物超伝導薄膜の製造方法
JP2004311624A (ja) 積層体およびその製造方法
JPH09214017A (ja) ホール素子
JP2566028B2 (ja) 超伝導素子の製造加工方法
JPS60128262A (ja) 高熱伝導性複合回路基板の製造方法
JPH05218528A (ja) 磁電変換素子
JP2966378B2 (ja) Ｂａ−Ｋ−Ｂｉ−Ｏ系超電導薄膜の製造方法
CN118913470A (zh) 一种负温度系数热敏电阻温度传感器及其制造方法和应用
JPS59139688A (ja) 酸化物薄膜の熱処理方法
JPS63156312A (ja) 半導体装置の製造方法
JPS62242372A (ja) 光導電素子の製造方法
JPS62234322A (ja) 半導体装置の製造方法