JPH0419699B2 - - Google Patents

Info

Publication number
JPH0419699B2
JPH0419699B2 JP57018374A JP1837482A JPH0419699B2 JP H0419699 B2 JPH0419699 B2 JP H0419699B2 JP 57018374 A JP57018374 A JP 57018374A JP 1837482 A JP1837482 A JP 1837482A JP H0419699 B2 JPH0419699 B2 JP H0419699B2
Authority
JP
Japan
Prior art keywords
compound semiconductor
thin film
substrate
glass
glass layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57018374A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58135628A (ja
Inventor
Keiji Kuboyama
Takeki Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Industry Co Ltd filed Critical Asahi Chemical Industry Co Ltd
Priority to JP57018374A priority Critical patent/JPS58135628A/ja
Publication of JPS58135628A publication Critical patent/JPS58135628A/ja
Publication of JPH0419699B2 publication Critical patent/JPH0419699B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Hall/Mr Elements (AREA)
  • Recrystallisation Techniques (AREA)
JP57018374A 1982-02-08 1982-02-08 化合物半導体薄膜構造体の製造方法 Granted JPS58135628A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57018374A JPS58135628A (ja) 1982-02-08 1982-02-08 化合物半導体薄膜構造体の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57018374A JPS58135628A (ja) 1982-02-08 1982-02-08 化合物半導体薄膜構造体の製造方法

Publications (2)

Publication Number Publication Date
JPS58135628A JPS58135628A (ja) 1983-08-12
JPH0419699B2 true JPH0419699B2 (enrdf_load_stackoverflow) 1992-03-31

Family

ID=11969931

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57018374A Granted JPS58135628A (ja) 1982-02-08 1982-02-08 化合物半導体薄膜構造体の製造方法

Country Status (1)

Country Link
JP (1) JPS58135628A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4891329A (en) * 1988-11-29 1990-01-02 University Of North Carolina Method of forming a nonsilicon semiconductor on insulator structure
US7687372B2 (en) * 2005-04-08 2010-03-30 Versatilis Llc System and method for manufacturing thick and thin film devices using a donee layer cleaved from a crystalline donor
JP5409033B2 (ja) * 2008-02-18 2014-02-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN112687799B (zh) * 2020-12-19 2022-10-11 复旦大学 一种高结晶度半导体膜转移制造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4894368A (enrdf_load_stackoverflow) * 1972-03-13 1973-12-05

Also Published As

Publication number Publication date
JPS58135628A (ja) 1983-08-12

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