JPS58127378A - 半導体装置の製造法 - Google Patents

半導体装置の製造法

Info

Publication number
JPS58127378A
JPS58127378A JP57009062A JP906282A JPS58127378A JP S58127378 A JPS58127378 A JP S58127378A JP 57009062 A JP57009062 A JP 57009062A JP 906282 A JP906282 A JP 906282A JP S58127378 A JPS58127378 A JP S58127378A
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
electrode
gate
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57009062A
Other languages
English (en)
Japanese (ja)
Other versions
JPH055172B2 (enrdf_load_stackoverflow
Inventor
Seishiro Yoshioka
吉岡 征四郎
Takao Yonehara
隆夫 米原
Seiichi Miyazawa
宮沢 誠一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP57009062A priority Critical patent/JPS58127378A/ja
Publication of JPS58127378A publication Critical patent/JPS58127378A/ja
Publication of JPH055172B2 publication Critical patent/JPH055172B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Liquid Crystal (AREA)
JP57009062A 1982-01-23 1982-01-23 半導体装置の製造法 Granted JPS58127378A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57009062A JPS58127378A (ja) 1982-01-23 1982-01-23 半導体装置の製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57009062A JPS58127378A (ja) 1982-01-23 1982-01-23 半導体装置の製造法

Publications (2)

Publication Number Publication Date
JPS58127378A true JPS58127378A (ja) 1983-07-29
JPH055172B2 JPH055172B2 (enrdf_load_stackoverflow) 1993-01-21

Family

ID=11710122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57009062A Granted JPS58127378A (ja) 1982-01-23 1982-01-23 半導体装置の製造法

Country Status (1)

Country Link
JP (1) JPS58127378A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61136272A (ja) * 1984-12-07 1986-06-24 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0737228U (ja) * 1993-12-22 1995-07-11 株式会社東亜セイコー スロットルマシン機能を備えたゴルフボール貸与機

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5482983A (en) * 1977-12-14 1979-07-02 Mitsubishi Electric Corp Manufacture of insulating gate type field effect transistor
JPS56135968A (en) * 1980-03-27 1981-10-23 Canon Inc Amorphous silicon thin film transistor and manufacture thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5482983A (en) * 1977-12-14 1979-07-02 Mitsubishi Electric Corp Manufacture of insulating gate type field effect transistor
JPS56135968A (en) * 1980-03-27 1981-10-23 Canon Inc Amorphous silicon thin film transistor and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61136272A (ja) * 1984-12-07 1986-06-24 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
JPH055172B2 (enrdf_load_stackoverflow) 1993-01-21

Similar Documents

Publication Publication Date Title
JPS5928992B2 (ja) Mosトランジスタおよびその製造方法
JPS6393144A (ja) エピタキシャル累層のトランジスタ構造及びその製造方法
JPH0325951B2 (enrdf_load_stackoverflow)
JPS62177909A (ja) 半導体装置の製造方法
US4169746A (en) Method for making silicon on sapphire transistor utilizing predeposition of leads
JPS63200572A (ja) 薄膜半導体装置の製造方法
JPS58127378A (ja) 半導体装置の製造法
KR100713880B1 (ko) 다결정실리콘 박막트랜지스터의 제조방법
JPH0614549B2 (ja) 薄膜トランジスタ
US20070096107A1 (en) Semiconductor devices with dielectric layers and methods of fabricating same
JPS6028397B2 (ja) 半導体装置の製造方法
JPS6336569A (ja) 半導体装置
JPH0536911A (ja) 3次元回路素子およびその製造方法
JP3070090B2 (ja) 半導体装置の製造方法
JPS6292327A (ja) 半導体装置及びその製造方法
JPH03255675A (ja) 光センサ及び該光センサを有するイメージセンサ
JPH0319370A (ja) 半導体装置
JPS6141130B2 (enrdf_load_stackoverflow)
JPH04336468A (ja) 薄膜トランジスタの製造方法
JPS597231B2 (ja) 絶縁ゲイト型電界効果半導体装置の作製方法
JP3070088B2 (ja) 半導体装置の製造方法
JPH04307741A (ja) 半導体装置の製造方法
JP2629792B2 (ja) Mos型半導体装置の製造方法
JP3052489B2 (ja) 薄膜トランジスタの製造方法
JPH0572749B2 (enrdf_load_stackoverflow)