JPS5812370A - 高分子半導体素子 - Google Patents

高分子半導体素子

Info

Publication number
JPS5812370A
JPS5812370A JP56109339A JP10933981A JPS5812370A JP S5812370 A JPS5812370 A JP S5812370A JP 56109339 A JP56109339 A JP 56109339A JP 10933981 A JP10933981 A JP 10933981A JP S5812370 A JPS5812370 A JP S5812370A
Authority
JP
Japan
Prior art keywords
polyacetylene
film
poly
junction
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56109339A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0414513B2 (enExample
Inventor
Shinichi Muramatsu
信一 村松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56109339A priority Critical patent/JPS5812370A/ja
Publication of JPS5812370A publication Critical patent/JPS5812370A/ja
Publication of JPH0414513B2 publication Critical patent/JPH0414513B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/26—Diodes comprising organic-organic junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H10K85/143—Polyacetylene; Derivatives thereof
    • H10W72/90—
    • H10W72/07554—
    • H10W72/536—
    • H10W72/547—
    • H10W72/59—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
JP56109339A 1981-07-15 1981-07-15 高分子半導体素子 Granted JPS5812370A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56109339A JPS5812370A (ja) 1981-07-15 1981-07-15 高分子半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56109339A JPS5812370A (ja) 1981-07-15 1981-07-15 高分子半導体素子

Publications (2)

Publication Number Publication Date
JPS5812370A true JPS5812370A (ja) 1983-01-24
JPH0414513B2 JPH0414513B2 (enExample) 1992-03-13

Family

ID=14507715

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56109339A Granted JPS5812370A (ja) 1981-07-15 1981-07-15 高分子半導体素子

Country Status (1)

Country Link
JP (1) JPS5812370A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154682A (ja) * 1984-01-25 1985-08-14 Showa Denko Kk Ｐ−ｎホモ接合素子
JPS61128569A (ja) * 1984-11-23 1986-06-16 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 絶縁ゲ−ト電界効果トランジスタ
JPS6314472A (ja) * 1986-07-04 1988-01-21 Mitsubishi Electric Corp 電界効果型トランジスタ
JPS6314471A (ja) * 1986-07-04 1988-01-21 Mitsubishi Electric Corp 電界効果型トランジスタ
US5153681A (en) * 1989-07-25 1992-10-06 Matsushita Electric Industrial Co., Ltd. Electrcally plastic device and its control method
JP2004125791A (ja) * 2002-09-25 2004-04-22 Stmicroelectronics Inc 有機半導体センサー装置
JP2004221562A (ja) * 2002-12-26 2004-08-05 Konica Minolta Holdings Inc 有機薄膜トランジスタ素子の製造方法、該製造方法により製造した有機薄膜トランジスタ素子、及び有機薄膜トランジスタ素子シート

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154682A (ja) * 1984-01-25 1985-08-14 Showa Denko Kk Ｐ−ｎホモ接合素子
JPS61128569A (ja) * 1984-11-23 1986-06-16 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 絶縁ゲ−ト電界効果トランジスタ
JPS6314472A (ja) * 1986-07-04 1988-01-21 Mitsubishi Electric Corp 電界効果型トランジスタ
JPS6314471A (ja) * 1986-07-04 1988-01-21 Mitsubishi Electric Corp 電界効果型トランジスタ
US5153681A (en) * 1989-07-25 1992-10-06 Matsushita Electric Industrial Co., Ltd. Electrcally plastic device and its control method
JP2004125791A (ja) * 2002-09-25 2004-04-22 Stmicroelectronics Inc 有機半導体センサー装置
JP2004221562A (ja) * 2002-12-26 2004-08-05 Konica Minolta Holdings Inc 有機薄膜トランジスタ素子の製造方法、該製造方法により製造した有機薄膜トランジスタ素子、及び有機薄膜トランジスタ素子シート

Also Published As

Publication number Publication date
JPH0414513B2 (enExample) 1992-03-13

Similar Documents

Publication Publication Date Title
US3941630A (en) Method of fabricating a charged couple radiation sensing device
US4665609A (en) Process of manufacturing a photosensitive device having a plurality of detectors separated by zones impervious to the radiation to be detected
US20070227578A1 (en) Method for patterning a photovoltaic device comprising CIGS material using an etch process
US4179794A (en) Process of manufacturing semiconductor devices
JP2663048B2 (ja) 電界発光シリコン構造の製造方法
JPH079914B2 (ja) 化合物半導体装置の構造
CN112117351B (zh) 一种用于碲镉汞pn结电学性能引出的方法、探测器芯片
US4349395A (en) Method for producing MOS semiconductor device
KR19980703224A (ko) 다공성 실리콘을 포함하는 전계 발광 장치
JPS5812370A (ja) 高分子半導体素子
Tsumura et al. Chemically prepared poly (N-methylpyrrole) thin film. Its application to the field-effect transistor.
KR20120010773A (ko) 플렉서블 광전변환 소자 및 이의 제조방법
JP3106569B2 (ja) 発光素子
JPH07235660A (ja) サイリスタの製造方法
Hajimoto et al. Coloration in a WO3 film
JPS60153183A (ja) ダイオ−ド
JPS5848941A (ja) 半導体装置とその製造方法
US3476661A (en) Process for increasing the reverse voltage of thermally oxidized silicon members with at least one barrier layer
KR100189736B1 (ko) 반도체 소자의 트렌치 격리층형성방법
JPS5712579A (en) Buried type semiconductor laser
KR890003416B1 (ko) 반도체 장치 및 그의 제조방법
JPS5885583A (ja) 半導体レ−ザ装置の製造方法
CN119095400A (zh) 一种钙钛矿太阳能电池及其制备方法
JPS59195823A (ja) 電極形成方法
JPS6051263B2 (ja) 半導体装置の製造方法