JPH0414513B2 - - Google Patents

Info

Publication number
JPH0414513B2
JPH0414513B2 JP56109339A JP10933981A JPH0414513B2 JP H0414513 B2 JPH0414513 B2 JP H0414513B2 JP 56109339 A JP56109339 A JP 56109339A JP 10933981 A JP10933981 A JP 10933981A JP H0414513 B2 JPH0414513 B2 JP H0414513B2
Authority
JP
Japan
Prior art keywords
para
poly
film
polyacetylene
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56109339A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5812370A (ja
Inventor
Shinichi Muramatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56109339A priority Critical patent/JPS5812370A/ja
Publication of JPS5812370A publication Critical patent/JPS5812370A/ja
Publication of JPH0414513B2 publication Critical patent/JPH0414513B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/26—Diodes comprising organic-organic junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H10K85/143—Polyacetylene; Derivatives thereof
    • H10W72/90—
    • H10W72/07554—
    • H10W72/536—
    • H10W72/547—
    • H10W72/59—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
JP56109339A 1981-07-15 1981-07-15 高分子半導体素子 Granted JPS5812370A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56109339A JPS5812370A (ja) 1981-07-15 1981-07-15 高分子半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56109339A JPS5812370A (ja) 1981-07-15 1981-07-15 高分子半導体素子

Publications (2)

Publication Number Publication Date
JPS5812370A JPS5812370A (ja) 1983-01-24
JPH0414513B2 true JPH0414513B2 (enExample) 1992-03-13

Family

ID=14507715

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56109339A Granted JPS5812370A (ja) 1981-07-15 1981-07-15 高分子半導体素子

Country Status (1)

Country Link
JP (1) JPS5812370A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154682A (ja) * 1984-01-25 1985-08-14 Showa Denko Kk Ｐ−ｎホモ接合素子
EP0182925B1 (en) * 1984-11-23 1989-05-24 International Business Machines Corporation Insulated-gate field-effect transistor employing small band-gap material
JPH0638492B2 (ja) * 1986-07-04 1994-05-18 三菱電機株式会社 電界効果型トランジスタ
JPH0638491B2 (ja) * 1986-07-04 1994-05-18 三菱電機株式会社 電界効果型トランジスタ
EP0418504B1 (en) * 1989-07-25 1995-04-05 Matsushita Electric Industrial Co., Ltd. Organic semiconductor memory device having a MISFET structure and its control method
US6852996B2 (en) * 2002-09-25 2005-02-08 Stmicroelectronics, Inc. Organic semiconductor sensor device
JP2004221562A (ja) * 2002-12-26 2004-08-05 Konica Minolta Holdings Inc 有機薄膜トランジスタ素子の製造方法、該製造方法により製造した有機薄膜トランジスタ素子、及び有機薄膜トランジスタ素子シート

Also Published As

Publication number Publication date
JPS5812370A (ja) 1983-01-24

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