JPS5812370A - 高分子半導体素子 - Google Patents
高分子半導体素子Info
- Publication number
- JPS5812370A JPS5812370A JP56109339A JP10933981A JPS5812370A JP S5812370 A JPS5812370 A JP S5812370A JP 56109339 A JP56109339 A JP 56109339A JP 10933981 A JP10933981 A JP 10933981A JP S5812370 A JPS5812370 A JP S5812370A
- Authority
- JP
- Japan
- Prior art keywords
- polyacetylene
- film
- poly
- junction
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/20—Organic diodes
- H10K10/26—Diodes comprising organic-organic junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
- H10K85/143—Polyacetylene; Derivatives thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56109339A JPS5812370A (ja) | 1981-07-15 | 1981-07-15 | 高分子半導体素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56109339A JPS5812370A (ja) | 1981-07-15 | 1981-07-15 | 高分子半導体素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5812370A true JPS5812370A (ja) | 1983-01-24 |
JPH0414513B2 JPH0414513B2 (enrdf_load_stackoverflow) | 1992-03-13 |
Family
ID=14507715
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56109339A Granted JPS5812370A (ja) | 1981-07-15 | 1981-07-15 | 高分子半導体素子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5812370A (enrdf_load_stackoverflow) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60154682A (ja) * | 1984-01-25 | 1985-08-14 | Showa Denko Kk | P−nホモ接合素子 |
JPS61128569A (ja) * | 1984-11-23 | 1986-06-16 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 絶縁ゲ−ト電界効果トランジスタ |
JPS6314471A (ja) * | 1986-07-04 | 1988-01-21 | Mitsubishi Electric Corp | 電界効果型トランジスタ |
JPS6314472A (ja) * | 1986-07-04 | 1988-01-21 | Mitsubishi Electric Corp | 電界効果型トランジスタ |
US5153681A (en) * | 1989-07-25 | 1992-10-06 | Matsushita Electric Industrial Co., Ltd. | Electrcally plastic device and its control method |
JP2004125791A (ja) * | 2002-09-25 | 2004-04-22 | Stmicroelectronics Inc | 有機半導体センサー装置 |
JP2004221562A (ja) * | 2002-12-26 | 2004-08-05 | Konica Minolta Holdings Inc | 有機薄膜トランジスタ素子の製造方法、該製造方法により製造した有機薄膜トランジスタ素子、及び有機薄膜トランジスタ素子シート |
-
1981
- 1981-07-15 JP JP56109339A patent/JPS5812370A/ja active Granted
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60154682A (ja) * | 1984-01-25 | 1985-08-14 | Showa Denko Kk | P−nホモ接合素子 |
JPS61128569A (ja) * | 1984-11-23 | 1986-06-16 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 絶縁ゲ−ト電界効果トランジスタ |
JPS6314471A (ja) * | 1986-07-04 | 1988-01-21 | Mitsubishi Electric Corp | 電界効果型トランジスタ |
JPS6314472A (ja) * | 1986-07-04 | 1988-01-21 | Mitsubishi Electric Corp | 電界効果型トランジスタ |
US5153681A (en) * | 1989-07-25 | 1992-10-06 | Matsushita Electric Industrial Co., Ltd. | Electrcally plastic device and its control method |
JP2004125791A (ja) * | 2002-09-25 | 2004-04-22 | Stmicroelectronics Inc | 有機半導体センサー装置 |
JP2004221562A (ja) * | 2002-12-26 | 2004-08-05 | Konica Minolta Holdings Inc | 有機薄膜トランジスタ素子の製造方法、該製造方法により製造した有機薄膜トランジスタ素子、及び有機薄膜トランジスタ素子シート |
Also Published As
Publication number | Publication date |
---|---|
JPH0414513B2 (enrdf_load_stackoverflow) | 1992-03-13 |
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