JPS5812193A - 半導体メモリ - Google Patents

半導体メモリ

Info

Publication number
JPS5812193A
JPS5812193A JP56110189A JP11018981A JPS5812193A JP S5812193 A JPS5812193 A JP S5812193A JP 56110189 A JP56110189 A JP 56110189A JP 11018981 A JP11018981 A JP 11018981A JP S5812193 A JPS5812193 A JP S5812193A
Authority
JP
Japan
Prior art keywords
pair
signal
memory
transistor
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56110189A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0217874B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Iwahashi
岩橋　弘
Masamichi Asano
正通 浅野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56110189A priority Critical patent/JPS5812193A/ja
Publication of JPS5812193A publication Critical patent/JPS5812193A/ja
Publication of JPH0217874B2 publication Critical patent/JPH0217874B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

Landscapes

  • Static Random-Access Memory (AREA)
  • Dram (AREA)
JP56110189A 1981-07-15 1981-07-15 半導体メモリ Granted JPS5812193A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56110189A JPS5812193A (ja) 1981-07-15 1981-07-15 半導体メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56110189A JPS5812193A (ja) 1981-07-15 1981-07-15 半導体メモリ

Publications (2)

Publication Number Publication Date
JPS5812193A true JPS5812193A (ja) 1983-01-24
JPH0217874B2 JPH0217874B2 (enrdf_load_stackoverflow) 1990-04-23

Family

ID=14529295

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56110189A Granted JPS5812193A (ja) 1981-07-15 1981-07-15 半導体メモリ

Country Status (1)

Country Link
JP (1) JPS5812193A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59154692A (ja) * 1983-02-23 1984-09-03 Toshiba Corp 半導体記憶装置
JPS59155165A (ja) * 1983-02-23 1984-09-04 Toshiba Corp 半導体記憶装置
JPS6296085U (enrdf_load_stackoverflow) * 1985-12-04 1987-06-19
JPS62197990A (ja) * 1986-02-25 1987-09-01 Mitsubishi Electric Corp 半導体記憶回路
JPH01211394A (ja) * 1988-02-19 1989-08-24 Sony Corp メモリ装置
JPH03100992A (ja) * 1989-09-05 1991-04-25 Motorola Inc 改良されたビット線等化装置を有するメモリ
JPH07130177A (ja) * 1993-11-02 1995-05-19 Nec Corp 半導体記憶装置
US7835191B2 (en) * 2001-02-22 2010-11-16 Samsung Electronics Co., Ltd. Bit line setup and discharge circuit for programming non-volatile memory

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5522217A (en) * 1978-07-28 1980-02-16 Fujitsu Ltd Reset circuit
JPS5619587A (en) * 1979-07-27 1981-02-24 Nec Corp Memory circuit
JPS5647990A (en) * 1979-09-21 1981-04-30 Nec Corp Memory device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5522217A (en) * 1978-07-28 1980-02-16 Fujitsu Ltd Reset circuit
JPS5619587A (en) * 1979-07-27 1981-02-24 Nec Corp Memory circuit
JPS5647990A (en) * 1979-09-21 1981-04-30 Nec Corp Memory device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59154692A (ja) * 1983-02-23 1984-09-03 Toshiba Corp 半導体記憶装置
JPS59155165A (ja) * 1983-02-23 1984-09-04 Toshiba Corp 半導体記憶装置
JPS6296085U (enrdf_load_stackoverflow) * 1985-12-04 1987-06-19
JPS62197990A (ja) * 1986-02-25 1987-09-01 Mitsubishi Electric Corp 半導体記憶回路
JPH01211394A (ja) * 1988-02-19 1989-08-24 Sony Corp メモリ装置
JPH03100992A (ja) * 1989-09-05 1991-04-25 Motorola Inc 改良されたビット線等化装置を有するメモリ
JPH07130177A (ja) * 1993-11-02 1995-05-19 Nec Corp 半導体記憶装置
US7835191B2 (en) * 2001-02-22 2010-11-16 Samsung Electronics Co., Ltd. Bit line setup and discharge circuit for programming non-volatile memory

Also Published As

Publication number Publication date
JPH0217874B2 (enrdf_load_stackoverflow) 1990-04-23

Similar Documents

Publication Publication Date Title
US4475178A (en) Semiconductor regeneration/precharge device
US20210335429A1 (en) Sensing in floating-source memory architecture
US5883837A (en) Reading circuit for semiconductor memory cells
KR100353471B1 (ko) 데이터 센스 앰프
JPS5891594A (ja) ダイナミツク型半導体記憶装置
EP0124868B1 (en) Semiconductor memory
KR100211481B1 (ko) 전압 발생 회로가 구비된 반도체 메모리 디바이스
US4110840A (en) Sense line charging system for random access memory
JPS5856198B2 (ja) 半導体記憶装置
KR19980015269A (ko) 반도체 메모리장치의 내부 승압 전압 발생기
JPS5812193A (ja) 半導体メモリ
US4858193A (en) Preamplification method and apparatus for dram sense amplifiers
US5539701A (en) Sense circuit for semiconductor memory devices
US4733373A (en) Dynamic memory with improved arrangement for precharging bit lines
JPS5810799B2 (ja) 半導体記憶装置
US5577000A (en) Sense amplifier circuit
EP0170781B1 (en) Mos dynamic memory device
US5459416A (en) Sense amplifier common mode dip filter circuit to avoid false misses
US6483352B1 (en) Current mirror sense amplifier
JPS58128090A (ja) ダイナミツクｉｃメモリ
US5694074A (en) Semiconductor integrated circuit being able to generate sufficient boost potential disregarding generation of noise
JP3094913B2 (ja) 半導体回路
EP0204488A2 (en) Semiconductor memory
EP0068894A2 (en) Dynamic random access memory device
JPH029084A (ja) ダイナミックｒａｍ