JPS58115851A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58115851A
JPS58115851A JP56213292A JP21329281A JPS58115851A JP S58115851 A JPS58115851 A JP S58115851A JP 56213292 A JP56213292 A JP 56213292A JP 21329281 A JP21329281 A JP 21329281A JP S58115851 A JPS58115851 A JP S58115851A
Authority
JP
Japan
Prior art keywords
source
active matrix
layer
film
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56213292A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0338751B2 (enExample
Inventor
Shinji Morozumi
両角　伸治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP56213292A priority Critical patent/JPS58115851A/ja
Publication of JPS58115851A publication Critical patent/JPS58115851A/ja
Publication of JPH0338751B2 publication Critical patent/JPH0338751B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP56213292A 1981-12-28 1981-12-28 半導体装置の製造方法 Granted JPS58115851A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56213292A JPS58115851A (ja) 1981-12-28 1981-12-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56213292A JPS58115851A (ja) 1981-12-28 1981-12-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58115851A true JPS58115851A (ja) 1983-07-09
JPH0338751B2 JPH0338751B2 (enExample) 1991-06-11

Family

ID=16636698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56213292A Granted JPS58115851A (ja) 1981-12-28 1981-12-28 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58115851A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63158875A (ja) * 1986-12-22 1988-07-01 Nec Corp 薄膜トランジスタの製造方法
JPS63168052A (ja) * 1986-12-29 1988-07-12 Nec Corp 薄膜トランジスタとその製造方法
US5077233A (en) * 1984-10-09 1991-12-31 Fujitsu Limited Method for recrystallizing specified portions of a non-crystalline semiconductor material to fabricate a semiconductor device therein

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5210779U (enExample) * 1975-07-10 1977-01-25

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5210779U (enExample) * 1975-07-10 1977-01-25

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5077233A (en) * 1984-10-09 1991-12-31 Fujitsu Limited Method for recrystallizing specified portions of a non-crystalline semiconductor material to fabricate a semiconductor device therein
JPS63158875A (ja) * 1986-12-22 1988-07-01 Nec Corp 薄膜トランジスタの製造方法
JPS63168052A (ja) * 1986-12-29 1988-07-12 Nec Corp 薄膜トランジスタとその製造方法

Also Published As

Publication number Publication date
JPH0338751B2 (enExample) 1991-06-11

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