JPS58114434A - 高耐圧半導体装置 - Google Patents

高耐圧半導体装置

Info

Publication number
JPS58114434A
JPS58114434A JP56209745A JP20974581A JPS58114434A JP S58114434 A JPS58114434 A JP S58114434A JP 56209745 A JP56209745 A JP 56209745A JP 20974581 A JP20974581 A JP 20974581A JP S58114434 A JPS58114434 A JP S58114434A
Authority
JP
Japan
Prior art keywords
region
semiconductor device
distance
conductivity type
opposite conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56209745A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0121633B2 (enrdf_load_stackoverflow
Inventor
Kazuo Yajima
矢島　一夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56209745A priority Critical patent/JPS58114434A/ja
Publication of JPS58114434A publication Critical patent/JPS58114434A/ja
Publication of JPH0121633B2 publication Critical patent/JPH0121633B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments

Landscapes

  • Bipolar Transistors (AREA)
JP56209745A 1981-12-28 1981-12-28 高耐圧半導体装置 Granted JPS58114434A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56209745A JPS58114434A (ja) 1981-12-28 1981-12-28 高耐圧半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56209745A JPS58114434A (ja) 1981-12-28 1981-12-28 高耐圧半導体装置

Publications (2)

Publication Number Publication Date
JPS58114434A true JPS58114434A (ja) 1983-07-07
JPH0121633B2 JPH0121633B2 (enrdf_load_stackoverflow) 1989-04-21

Family

ID=16577928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56209745A Granted JPS58114434A (ja) 1981-12-28 1981-12-28 高耐圧半導体装置

Country Status (1)

Country Link
JP (1) JPS58114434A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7911020B2 (en) 2007-07-12 2011-03-22 Fuji Electric Systems Co., Ltd. Semiconductor device having breakdown voltage maintaining structure and its manufacturing method
CN103681808A (zh) * 2012-09-09 2014-03-26 苏州英能电子科技有限公司 含场板结构的横向双极型晶体管

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012004466A (ja) * 2010-06-21 2012-01-05 Hitachi Ltd 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49130184A (enrdf_load_stackoverflow) * 1973-04-11 1974-12-13
JPS57155773A (en) * 1981-03-20 1982-09-25 Sanyo Electric Co Ltd High pressure-resistant planar transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49130184A (enrdf_load_stackoverflow) * 1973-04-11 1974-12-13
JPS57155773A (en) * 1981-03-20 1982-09-25 Sanyo Electric Co Ltd High pressure-resistant planar transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7911020B2 (en) 2007-07-12 2011-03-22 Fuji Electric Systems Co., Ltd. Semiconductor device having breakdown voltage maintaining structure and its manufacturing method
CN103681808A (zh) * 2012-09-09 2014-03-26 苏州英能电子科技有限公司 含场板结构的横向双极型晶体管

Also Published As

Publication number Publication date
JPH0121633B2 (enrdf_load_stackoverflow) 1989-04-21

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