JPS58112337A - 化合物半導体装置の製造方法 - Google Patents

化合物半導体装置の製造方法

Info

Publication number
JPS58112337A
JPS58112337A JP21229581A JP21229581A JPS58112337A JP S58112337 A JPS58112337 A JP S58112337A JP 21229581 A JP21229581 A JP 21229581A JP 21229581 A JP21229581 A JP 21229581A JP S58112337 A JPS58112337 A JP S58112337A
Authority
JP
Japan
Prior art keywords
compound semiconductor
back side
softening point
semiconductor device
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21229581A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0221135B2 (enrdf_load_stackoverflow
Inventor
Aiichiro Nara
奈良　愛一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP21229581A priority Critical patent/JPS58112337A/ja
Publication of JPS58112337A publication Critical patent/JPS58112337A/ja
Publication of JPH0221135B2 publication Critical patent/JPH0221135B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
JP21229581A 1981-12-25 1981-12-25 化合物半導体装置の製造方法 Granted JPS58112337A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21229581A JPS58112337A (ja) 1981-12-25 1981-12-25 化合物半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21229581A JPS58112337A (ja) 1981-12-25 1981-12-25 化合物半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58112337A true JPS58112337A (ja) 1983-07-04
JPH0221135B2 JPH0221135B2 (enrdf_load_stackoverflow) 1990-05-11

Family

ID=16620211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21229581A Granted JPS58112337A (ja) 1981-12-25 1981-12-25 化合物半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58112337A (enrdf_load_stackoverflow)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5011182A (enrdf_load_stackoverflow) * 1973-05-28 1975-02-05
JPS5530834A (en) * 1978-08-25 1980-03-04 Nec Corp Method of forming ohmic contact in semiconductor pellet

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5011182A (enrdf_load_stackoverflow) * 1973-05-28 1975-02-05
JPS5530834A (en) * 1978-08-25 1980-03-04 Nec Corp Method of forming ohmic contact in semiconductor pellet

Also Published As

Publication number Publication date
JPH0221135B2 (enrdf_load_stackoverflow) 1990-05-11

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