JPS58111372A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58111372A
JPS58111372A JP56209338A JP20933881A JPS58111372A JP S58111372 A JPS58111372 A JP S58111372A JP 56209338 A JP56209338 A JP 56209338A JP 20933881 A JP20933881 A JP 20933881A JP S58111372 A JPS58111372 A JP S58111372A
Authority
JP
Japan
Prior art keywords
drain
photosensitive resin
pattern
electrode
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56209338A
Other languages
English (en)
Japanese (ja)
Other versions
JPH05853B2 (OSRAM
Inventor
Takeaki Okabe
岡部　健明
Hideshi Ito
伊藤　秀史
Takamitsu Kamiyama
神山　孝光
Toru Nakamura
徹 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56209338A priority Critical patent/JPS58111372A/ja
Publication of JPS58111372A publication Critical patent/JPS58111372A/ja
Publication of JPH05853B2 publication Critical patent/JPH05853B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P76/20—

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP56209338A 1981-12-25 1981-12-25 半導体装置の製造方法 Granted JPS58111372A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56209338A JPS58111372A (ja) 1981-12-25 1981-12-25 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56209338A JPS58111372A (ja) 1981-12-25 1981-12-25 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58111372A true JPS58111372A (ja) 1983-07-02
JPH05853B2 JPH05853B2 (OSRAM) 1993-01-06

Family

ID=16571289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56209338A Granted JPS58111372A (ja) 1981-12-25 1981-12-25 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58111372A (OSRAM)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730371A (en) * 1980-07-30 1982-02-18 Nec Corp Manufacture of insulated gate type field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730371A (en) * 1980-07-30 1982-02-18 Nec Corp Manufacture of insulated gate type field effect transistor

Also Published As

Publication number Publication date
JPH05853B2 (OSRAM) 1993-01-06

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