JPH05853B2 - - Google Patents
Info
- Publication number
- JPH05853B2 JPH05853B2 JP56209338A JP20933881A JPH05853B2 JP H05853 B2 JPH05853 B2 JP H05853B2 JP 56209338 A JP56209338 A JP 56209338A JP 20933881 A JP20933881 A JP 20933881A JP H05853 B2 JPH05853 B2 JP H05853B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- region
- semiconductor substrate
- drain
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H10P76/20—
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56209338A JPS58111372A (ja) | 1981-12-25 | 1981-12-25 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56209338A JPS58111372A (ja) | 1981-12-25 | 1981-12-25 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58111372A JPS58111372A (ja) | 1983-07-02 |
| JPH05853B2 true JPH05853B2 (OSRAM) | 1993-01-06 |
Family
ID=16571289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56209338A Granted JPS58111372A (ja) | 1981-12-25 | 1981-12-25 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58111372A (OSRAM) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5730371A (en) * | 1980-07-30 | 1982-02-18 | Nec Corp | Manufacture of insulated gate type field effect transistor |
-
1981
- 1981-12-25 JP JP56209338A patent/JPS58111372A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58111372A (ja) | 1983-07-02 |
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