JPH05853B2 - - Google Patents

Info

Publication number
JPH05853B2
JPH05853B2 JP56209338A JP20933881A JPH05853B2 JP H05853 B2 JPH05853 B2 JP H05853B2 JP 56209338 A JP56209338 A JP 56209338A JP 20933881 A JP20933881 A JP 20933881A JP H05853 B2 JPH05853 B2 JP H05853B2
Authority
JP
Japan
Prior art keywords
pattern
region
semiconductor substrate
drain
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56209338A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58111372A (ja
Inventor
Takeaki Okabe
Hideshi Ito
Takamitsu Kamyama
Tooru Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56209338A priority Critical patent/JPS58111372A/ja
Publication of JPS58111372A publication Critical patent/JPS58111372A/ja
Publication of JPH05853B2 publication Critical patent/JPH05853B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P76/20

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP56209338A 1981-12-25 1981-12-25 半導体装置の製造方法 Granted JPS58111372A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56209338A JPS58111372A (ja) 1981-12-25 1981-12-25 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56209338A JPS58111372A (ja) 1981-12-25 1981-12-25 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58111372A JPS58111372A (ja) 1983-07-02
JPH05853B2 true JPH05853B2 (OSRAM) 1993-01-06

Family

ID=16571289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56209338A Granted JPS58111372A (ja) 1981-12-25 1981-12-25 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58111372A (OSRAM)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730371A (en) * 1980-07-30 1982-02-18 Nec Corp Manufacture of insulated gate type field effect transistor

Also Published As

Publication number Publication date
JPS58111372A (ja) 1983-07-02

Similar Documents

Publication Publication Date Title
EP0063916B1 (en) Semiconductor intregrated circuits and manufacturing process thereof
JPH033389B2 (OSRAM)
US4792534A (en) Method of manufacturing a semiconductor device involving sidewall spacer formation
US4520553A (en) Process for manufacturing an integrated insulated-gate field-effect transistor
JP2780162B2 (ja) 半導体デバイスの製造方法
EP0142186B1 (en) Method of manufacturing a pattern of conductive material
JPH05853B2 (OSRAM)
JPS61183967A (ja) 半導体装置の製造方法
JPH0370125A (ja) 半導体装置の製造方法
JPS62154622A (ja) 半導体装置の製造方法
JPH03191529A (ja) 半導体装置の製造方法
JP2630616B2 (ja) 半導体装置の製造方法
JPS6243341B2 (OSRAM)
JPH0685267A (ja) パワーmosfetの製造方法
JPH02267943A (ja) Mis型半導体装置の製造方法
KR100236073B1 (ko) 반도체 소자의 제조방법
KR100338095B1 (ko) 반도체소자의콘택홀형성방법
JPS58131773A (ja) 半導体装置の製造方法
JPS58207676A (ja) 半導体装置の製造方法
JPS6147670A (ja) 半導体装置の製造方法
JPS6197974A (ja) 半導体装置の製造方法
JPH02126679A (ja) Mosトランジスタ
JPH06260603A (ja) 半導体装置
JPH04245643A (ja) 半導体装置の製造方法
JPH04142749A (ja) 半導体装置の製造方法