JPS58108771A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS58108771A JPS58108771A JP56207845A JP20784581A JPS58108771A JP S58108771 A JPS58108771 A JP S58108771A JP 56207845 A JP56207845 A JP 56207845A JP 20784581 A JP20784581 A JP 20784581A JP S58108771 A JPS58108771 A JP S58108771A
- Authority
- JP
- Japan
- Prior art keywords
- guard ring
- width
- corner
- field plate
- corner part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/112—Field plates comprising multiple field plate segments
Landscapes
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56207845A JPS58108771A (ja) | 1981-12-22 | 1981-12-22 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56207845A JPS58108771A (ja) | 1981-12-22 | 1981-12-22 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58108771A true JPS58108771A (ja) | 1983-06-28 |
JPS6364905B2 JPS6364905B2 (enrdf_load_html_response) | 1988-12-14 |
Family
ID=16546474
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56207845A Granted JPS58108771A (ja) | 1981-12-22 | 1981-12-22 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58108771A (enrdf_load_html_response) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60111462A (ja) * | 1983-11-21 | 1985-06-17 | Mitsubishi Electric Corp | プレ−ナ形半導体装置 |
JPS62298171A (ja) * | 1986-06-17 | 1987-12-25 | Sanyo Electric Co Ltd | 半導体装置 |
US5731606A (en) * | 1995-05-31 | 1998-03-24 | Shrivastava; Ritu | Reliable edge cell array design |
US7911020B2 (en) | 2007-07-12 | 2011-03-22 | Fuji Electric Systems Co., Ltd. | Semiconductor device having breakdown voltage maintaining structure and its manufacturing method |
JP2014203959A (ja) * | 2013-04-04 | 2014-10-27 | 三菱電機株式会社 | 半導体装置 |
JP2016009728A (ja) * | 2014-06-23 | 2016-01-18 | トヨタ自動車株式会社 | 半導体装置 |
CN112635566A (zh) * | 2020-12-28 | 2021-04-09 | 捷捷微电(无锡)科技有限公司 | 一种mosfet器件的终端结构 |
-
1981
- 1981-12-22 JP JP56207845A patent/JPS58108771A/ja active Granted
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60111462A (ja) * | 1983-11-21 | 1985-06-17 | Mitsubishi Electric Corp | プレ−ナ形半導体装置 |
JPS62298171A (ja) * | 1986-06-17 | 1987-12-25 | Sanyo Electric Co Ltd | 半導体装置 |
US5731606A (en) * | 1995-05-31 | 1998-03-24 | Shrivastava; Ritu | Reliable edge cell array design |
US7911020B2 (en) | 2007-07-12 | 2011-03-22 | Fuji Electric Systems Co., Ltd. | Semiconductor device having breakdown voltage maintaining structure and its manufacturing method |
JP2014203959A (ja) * | 2013-04-04 | 2014-10-27 | 三菱電機株式会社 | 半導体装置 |
JP2016009728A (ja) * | 2014-06-23 | 2016-01-18 | トヨタ自動車株式会社 | 半導体装置 |
CN112635566A (zh) * | 2020-12-28 | 2021-04-09 | 捷捷微电(无锡)科技有限公司 | 一种mosfet器件的终端结构 |
Also Published As
Publication number | Publication date |
---|---|
JPS6364905B2 (enrdf_load_html_response) | 1988-12-14 |
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