JPS58106873A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58106873A
JPS58106873A JP56204886A JP20488681A JPS58106873A JP S58106873 A JPS58106873 A JP S58106873A JP 56204886 A JP56204886 A JP 56204886A JP 20488681 A JP20488681 A JP 20488681A JP S58106873 A JPS58106873 A JP S58106873A
Authority
JP
Japan
Prior art keywords
film
silicon
nitride film
silicon nitride
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56204886A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6257263B2 (enrdf_load_stackoverflow
Inventor
Masahiro Yamada
正弘 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP56204886A priority Critical patent/JPS58106873A/ja
Publication of JPS58106873A publication Critical patent/JPS58106873A/ja
Publication of JPS6257263B2 publication Critical patent/JPS6257263B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP56204886A 1981-12-18 1981-12-18 半導体装置の製造方法 Granted JPS58106873A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56204886A JPS58106873A (ja) 1981-12-18 1981-12-18 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56204886A JPS58106873A (ja) 1981-12-18 1981-12-18 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58106873A true JPS58106873A (ja) 1983-06-25
JPS6257263B2 JPS6257263B2 (enrdf_load_stackoverflow) 1987-11-30

Family

ID=16498019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56204886A Granted JPS58106873A (ja) 1981-12-18 1981-12-18 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58106873A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7101749B2 (en) 1998-12-09 2006-09-05 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50147877A (enrdf_load_stackoverflow) * 1974-05-08 1975-11-27
JPS511395A (enrdf_load_stackoverflow) * 1973-11-07 1976-01-08 Ici Ltd

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS511395A (enrdf_load_stackoverflow) * 1973-11-07 1976-01-08 Ici Ltd
JPS50147877A (enrdf_load_stackoverflow) * 1974-05-08 1975-11-27

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7101749B2 (en) 1998-12-09 2006-09-05 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
US7479430B2 (en) 1998-12-09 2009-01-20 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device

Also Published As

Publication number Publication date
JPS6257263B2 (enrdf_load_stackoverflow) 1987-11-30

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