JPS58101429A - ドライエツチング方法 - Google Patents

ドライエツチング方法

Info

Publication number
JPS58101429A
JPS58101429A JP56200315A JP20031581A JPS58101429A JP S58101429 A JPS58101429 A JP S58101429A JP 56200315 A JP56200315 A JP 56200315A JP 20031581 A JP20031581 A JP 20031581A JP S58101429 A JPS58101429 A JP S58101429A
Authority
JP
Japan
Prior art keywords
etching
gas
dry etching
atoms
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56200315A
Other languages
English (en)
Japanese (ja)
Other versions
JPH03769B2 (cg-RX-API-DMAC10.html
Inventor
Junichi Nishizawa
潤一 西澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP56200315A priority Critical patent/JPS58101429A/ja
Publication of JPS58101429A publication Critical patent/JPS58101429A/ja
Publication of JPH03769B2 publication Critical patent/JPH03769B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/246—

Landscapes

  • Drying Of Semiconductors (AREA)
JP56200315A 1981-12-12 1981-12-12 ドライエツチング方法 Granted JPS58101429A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56200315A JPS58101429A (ja) 1981-12-12 1981-12-12 ドライエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56200315A JPS58101429A (ja) 1981-12-12 1981-12-12 ドライエツチング方法

Publications (2)

Publication Number Publication Date
JPS58101429A true JPS58101429A (ja) 1983-06-16
JPH03769B2 JPH03769B2 (cg-RX-API-DMAC10.html) 1991-01-08

Family

ID=16422259

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56200315A Granted JPS58101429A (ja) 1981-12-12 1981-12-12 ドライエツチング方法

Country Status (1)

Country Link
JP (1) JPS58101429A (cg-RX-API-DMAC10.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61288429A (ja) * 1985-06-16 1986-12-18 Nec Corp ガリウムヒ素結晶の気相エツチング方法
JPH02267936A (ja) * 1989-04-07 1990-11-01 Seiko Epson Corp 化合物半導体のエッチング方法
JPH02267938A (ja) * 1989-04-07 1990-11-01 Seiko Epson Corp 化合物半導体のエッチング方法
JPH02283018A (ja) * 1989-01-31 1990-11-20 Matsushita Electric Ind Co Ltd 半導体基体の処理方法及び半導体の製造方法
US5133830A (en) * 1989-04-07 1992-07-28 Seiko Epson Corporation Method of pretreatment and anisotropic dry etching of thin film semiconductors
US5194119A (en) * 1989-05-15 1993-03-16 Seiko Epson Corporation Method of anisotropic dry etching of thin film semiconductors

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4856598A (cg-RX-API-DMAC10.html) * 1971-11-22 1973-08-08
JPS5515290A (en) * 1978-07-20 1980-02-02 Matsushita Electric Ind Co Ltd Manufacturing method of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4856598A (cg-RX-API-DMAC10.html) * 1971-11-22 1973-08-08
JPS5515290A (en) * 1978-07-20 1980-02-02 Matsushita Electric Ind Co Ltd Manufacturing method of semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61288429A (ja) * 1985-06-16 1986-12-18 Nec Corp ガリウムヒ素結晶の気相エツチング方法
JPH02283018A (ja) * 1989-01-31 1990-11-20 Matsushita Electric Ind Co Ltd 半導体基体の処理方法及び半導体の製造方法
JPH02267936A (ja) * 1989-04-07 1990-11-01 Seiko Epson Corp 化合物半導体のエッチング方法
JPH02267938A (ja) * 1989-04-07 1990-11-01 Seiko Epson Corp 化合物半導体のエッチング方法
US5133830A (en) * 1989-04-07 1992-07-28 Seiko Epson Corporation Method of pretreatment and anisotropic dry etching of thin film semiconductors
US5194119A (en) * 1989-05-15 1993-03-16 Seiko Epson Corporation Method of anisotropic dry etching of thin film semiconductors

Also Published As

Publication number Publication date
JPH03769B2 (cg-RX-API-DMAC10.html) 1991-01-08

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