JPS58100461A - 薄膜トランジスタの製造方法 - Google Patents

薄膜トランジスタの製造方法

Info

Publication number
JPS58100461A
JPS58100461A JP56199894A JP19989481A JPS58100461A JP S58100461 A JPS58100461 A JP S58100461A JP 56199894 A JP56199894 A JP 56199894A JP 19989481 A JP19989481 A JP 19989481A JP S58100461 A JPS58100461 A JP S58100461A
Authority
JP
Japan
Prior art keywords
layer
metal
film
bulb
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56199894A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0341986B2 (https=
Inventor
Hiroaki Kato
博章 加藤
Kohei Kishi
岸　幸平
Yutaka Takato
裕 高藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>
Sharp Corp
Original Assignee
JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>, Sharp Corp filed Critical JAPAN ELECTRONIC IND DEV ASSOC<JEIDA>
Priority to JP56199894A priority Critical patent/JPS58100461A/ja
Priority to US06/446,046 priority patent/US4469568A/en
Priority to DE3245313A priority patent/DE3245313C2/de
Priority to GB08235047A priority patent/GB2113462B/en
Publication of JPS58100461A publication Critical patent/JPS58100461A/ja
Publication of JPH0341986B2 publication Critical patent/JPH0341986B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films

Landscapes

  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
JP56199894A 1981-12-10 1981-12-10 薄膜トランジスタの製造方法 Granted JPS58100461A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56199894A JPS58100461A (ja) 1981-12-10 1981-12-10 薄膜トランジスタの製造方法
US06/446,046 US4469568A (en) 1981-12-10 1982-12-01 Method for making thin-film transistors
DE3245313A DE3245313C2 (de) 1981-12-10 1982-12-08 Verfahren zur Herstellung eines Dünnfilm-Transistors
GB08235047A GB2113462B (en) 1981-12-10 1982-12-08 Method for making gate insulation in thin film transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56199894A JPS58100461A (ja) 1981-12-10 1981-12-10 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS58100461A true JPS58100461A (ja) 1983-06-15
JPH0341986B2 JPH0341986B2 (https=) 1991-06-25

Family

ID=16415371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56199894A Granted JPS58100461A (ja) 1981-12-10 1981-12-10 薄膜トランジスタの製造方法

Country Status (4)

Country Link
US (1) US4469568A (https=)
JP (1) JPS58100461A (https=)
DE (1) DE3245313C2 (https=)
GB (1) GB2113462B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5391893A (en) * 1985-05-07 1995-02-21 Semicoductor Energy Laboratory Co., Ltd. Nonsingle crystal semiconductor and a semiconductor device using such semiconductor
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer
JP2786628B2 (ja) * 1987-10-15 1998-08-13 シャープ株式会社 液晶パネルの電極構造
JPH03190141A (ja) * 1989-12-12 1991-08-20 Samsung Electron Devices Co Ltd 平板ディスプレー用薄膜トランジスタ及びその製造方法
JPH03283636A (ja) * 1990-03-30 1991-12-13 Nippon Soken Inc 半導体基板の製造方法
JPH0465168A (ja) * 1990-07-05 1992-03-02 Hitachi Ltd 薄膜トランジスタ
KR960001611B1 (ko) 1991-03-06 1996-02-02 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법
US5468987A (en) * 1991-03-06 1995-11-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JP2794678B2 (ja) * 1991-08-26 1998-09-10 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
JP2873632B2 (ja) * 1991-03-15 1999-03-24 株式会社半導体エネルギー研究所 半導体装置
US6713783B1 (en) 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors
GB2255443B (en) * 1991-04-30 1995-09-13 Samsung Electronics Co Ltd Fabricating a metal electrode of a semiconductor device
JP3277548B2 (ja) * 1991-05-08 2002-04-22 セイコーエプソン株式会社 ディスプレイ基板
JPH06188419A (ja) * 1992-12-16 1994-07-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法
TW425637B (en) * 1993-01-18 2001-03-11 Semiconductor Energy Lab Method of fabricating mis semiconductor device
KR970004885B1 (ko) * 1993-05-12 1997-04-08 삼성전자 주식회사 평판표시장치 및 그 제조방법
JPH07135323A (ja) * 1993-10-20 1995-05-23 Semiconductor Energy Lab Co Ltd 薄膜状半導体集積回路およびその作製方法
JP3085628B2 (ja) * 1994-07-12 2000-09-11 シャープ株式会社 スイッチング素子の製造方法
US6224738B1 (en) * 1999-11-09 2001-05-01 Pacesetter, Inc. Method for a patterned etch with electrolytically grown mask
US6465334B1 (en) 2000-10-05 2002-10-15 Advanced Micro Devices, Inc. Enhanced electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors
US6559051B1 (en) 2000-10-05 2003-05-06 Advanced Micro Devices, Inc. Electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors
US20080121877A1 (en) * 2006-11-27 2008-05-29 3M Innovative Properties Company Thin film transistor with enhanced stability
US7655127B2 (en) * 2006-11-27 2010-02-02 3M Innovative Properties Company Method of fabricating thin film transistor
WO2010074913A2 (en) * 2008-12-23 2010-07-01 3M Innovative Properties Company Electrical connections for anodized thin film structures

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1161647A (en) * 1967-08-04 1969-08-13 Rca Corp Thin Film Field-Effect Solid State Devices
DE2820331C3 (de) * 1978-05-10 1982-03-18 Lüder, Ernst, Prof. Dr.-Ing., 7000 Stuttgart Dünnschicht-Feldeffekttransistor und Verfahren zu seiner Herstellung
JPS5669864A (en) * 1979-11-09 1981-06-11 Japan Electronic Ind Dev Assoc<Jeida> Thin-film transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6624450B1 (en) 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same

Also Published As

Publication number Publication date
DE3245313C2 (de) 1985-09-05
GB2113462A (en) 1983-08-03
JPH0341986B2 (https=) 1991-06-25
DE3245313A1 (de) 1983-06-23
GB2113462B (en) 1985-09-18
US4469568A (en) 1984-09-04

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