JPS5799784A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5799784A JPS5799784A JP17672580A JP17672580A JPS5799784A JP S5799784 A JPS5799784 A JP S5799784A JP 17672580 A JP17672580 A JP 17672580A JP 17672580 A JP17672580 A JP 17672580A JP S5799784 A JPS5799784 A JP S5799784A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- attaching
- rough surface
- semiconductor substrate
- contact resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000007423 decrease Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To decrease contact resistance and increase attaching strength, by giving a rough surface selectively on an electrode attaching surface of a semiconductor substrate, increasing an area, and having ohmic contact with an electrode metal. CONSTITUTION:An electrode-attaching portion is selectively etched on a semiconductor substrate 1. A rough surface 1a like rectangular wave is given and an electrode 3 is attached. An electrode area increases with the formation of rough surface, the contact resistance decreases, and the attaching strength increases. The performance of device can be improved with a simple construction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17672580A JPS5799784A (en) | 1980-12-11 | 1980-12-11 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17672580A JPS5799784A (en) | 1980-12-11 | 1980-12-11 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5799784A true JPS5799784A (en) | 1982-06-21 |
Family
ID=16018682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17672580A Pending JPS5799784A (en) | 1980-12-11 | 1980-12-11 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5799784A (en) |
-
1980
- 1980-12-11 JP JP17672580A patent/JPS5799784A/en active Pending
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