JPS6490585A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6490585A
JPS6490585A JP24943487A JP24943487A JPS6490585A JP S6490585 A JPS6490585 A JP S6490585A JP 24943487 A JP24943487 A JP 24943487A JP 24943487 A JP24943487 A JP 24943487A JP S6490585 A JPS6490585 A JP S6490585A
Authority
JP
Japan
Prior art keywords
plate
electric resistance
terminal
submount
partial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24943487A
Other languages
Japanese (ja)
Inventor
Masaki Tsunekane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP24943487A priority Critical patent/JPS6490585A/en
Publication of JPS6490585A publication Critical patent/JPS6490585A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To reduce a connecting resistance and to stabilize the operation of a laser element by bridging the upper face of a semiconductor element to the terminal with a metal having a brazing material on its partial or whole surface or a thin dielectric plate having a small electric resistance. CONSTITUTION:A submount 3 is formed on a stem 4, and a semiconductor laser element 2 is secured onto the submount 3. The upper face of the element 2 is bridged to be connected to a connecting terminal 5 provided on the step 4 with a thin conductive plate 1 having a large sectional area. The plate 1 is formed of a metal plate having a brazing material on its partial or whole surface, or a dielectric having a low electric resistance. Thus, since the electric resistance between the element 2 and the terminal 5 is reduced, the operation of the element 2 can be stabilized.
JP24943487A 1987-10-01 1987-10-01 Semiconductor device Pending JPS6490585A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24943487A JPS6490585A (en) 1987-10-01 1987-10-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24943487A JPS6490585A (en) 1987-10-01 1987-10-01 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6490585A true JPS6490585A (en) 1989-04-07

Family

ID=17192909

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24943487A Pending JPS6490585A (en) 1987-10-01 1987-10-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6490585A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013102328A1 (en) * 2013-03-08 2014-09-11 Osram Opto Semiconductors Gmbh Semiconductor laser array
JP2018200924A (en) * 2017-05-25 2018-12-20 富士通株式会社 Optical module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013102328A1 (en) * 2013-03-08 2014-09-11 Osram Opto Semiconductors Gmbh Semiconductor laser array
JP2018200924A (en) * 2017-05-25 2018-12-20 富士通株式会社 Optical module

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