JPS6446933A - Manufacture of semicondutor device - Google Patents

Manufacture of semicondutor device

Info

Publication number
JPS6446933A
JPS6446933A JP20376987A JP20376987A JPS6446933A JP S6446933 A JPS6446933 A JP S6446933A JP 20376987 A JP20376987 A JP 20376987A JP 20376987 A JP20376987 A JP 20376987A JP S6446933 A JPS6446933 A JP S6446933A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
film
naturally oxidized
ohmic resistance
adhesion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20376987A
Other languages
Japanese (ja)
Other versions
JP2580612B2 (en
Inventor
Masahiro Sekine
Hiroshi Morii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62203769A priority Critical patent/JP2580612B2/en
Publication of JPS6446933A publication Critical patent/JPS6446933A/en
Application granted granted Critical
Publication of JP2580612B2 publication Critical patent/JP2580612B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To form a metallic film having strong adhesion, and to inhibit ohmic resistance at a small value by etching the surface of a semiconductor substrate before the metallic film is shaped. CONSTITUTION:The quantity of etching of a naturally oxidized film formed onto the surface of a semiconductor substrate is optimized. That is, the naturally oxidized film shaped onto the surface of the semiconductor substrate has a large effect on the adhesion of the semiconductor substrate and a metallic film, and the naturally oxidized film is not removed completely and a trace quantity of the natural oxide film is left in an extent that the naturally oxidized film does not have much effect on ohmic resistance. Accordingly, the adhesion of the semiconductor substrate and the metallic film can be increased while ohmic resistance can be inhibited at a small value.
JP62203769A 1987-08-17 1987-08-17 Method for manufacturing semiconductor device Expired - Fee Related JP2580612B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62203769A JP2580612B2 (en) 1987-08-17 1987-08-17 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62203769A JP2580612B2 (en) 1987-08-17 1987-08-17 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS6446933A true JPS6446933A (en) 1989-02-21
JP2580612B2 JP2580612B2 (en) 1997-02-12

Family

ID=16479509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62203769A Expired - Fee Related JP2580612B2 (en) 1987-08-17 1987-08-17 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JP2580612B2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61267365A (en) * 1985-05-22 1986-11-26 Hitachi Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61267365A (en) * 1985-05-22 1986-11-26 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
JP2580612B2 (en) 1997-02-12

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Legal Events

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