JPS55150265A - Flat type diode with pressing force strengthening mechanism - Google Patents

Flat type diode with pressing force strengthening mechanism

Info

Publication number
JPS55150265A
JPS55150265A JP5690879A JP5690879A JPS55150265A JP S55150265 A JPS55150265 A JP S55150265A JP 5690879 A JP5690879 A JP 5690879A JP 5690879 A JP5690879 A JP 5690879A JP S55150265 A JPS55150265 A JP S55150265A
Authority
JP
Japan
Prior art keywords
pressing force
diode
regions
force strengthening
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5690879A
Other languages
Japanese (ja)
Other versions
JPS5731304B2 (en
Inventor
Kimihiro Muraoka
Masato Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Electric Manufacturing Ltd
Original Assignee
Toyo Electric Manufacturing Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Electric Manufacturing Ltd filed Critical Toyo Electric Manufacturing Ltd
Priority to JP5690879A priority Critical patent/JPS55150265A/en
Publication of JPS55150265A publication Critical patent/JPS55150265A/en
Publication of JPS5731304B2 publication Critical patent/JPS5731304B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To uniformly press both an effective region for rectifying and a pressing force strengthening area formed with an insulating film for not rectifying by isolating one diode wafer to form both the regions and containing them in a flat seal. CONSTITUTION:An SiO2 film 11 is formed on the n<+>-type layer of an pnn<+>silicon wafer 10, Au is diffused in the p-type layer, and then W reinforcing electrode 14 is secured via solder 13 containing mainly aluminum. An opening A' is perforated at the film 11, and an aluminum electrode 12 is selectively formed with regions A and B. The regions C, D are sandblasted to be isolated, and surface stabilizing treatment is chemically executed at the exposed junction portion, and a protective film 15 is coated thereon. The region B becomes an insulated pressing force strengthening area. According to this configuration, a flat type SCR and a diode can be, for example, connected in anti-parallel manner and both elements can be simultaneously pressed in parallel. Therefore, it can reduce the floating inductance and since it can freely select the capacity of the diode, it can improve the utility of the SCR.
JP5690879A 1979-05-11 1979-05-11 Flat type diode with pressing force strengthening mechanism Granted JPS55150265A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5690879A JPS55150265A (en) 1979-05-11 1979-05-11 Flat type diode with pressing force strengthening mechanism

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5690879A JPS55150265A (en) 1979-05-11 1979-05-11 Flat type diode with pressing force strengthening mechanism

Publications (2)

Publication Number Publication Date
JPS55150265A true JPS55150265A (en) 1980-11-22
JPS5731304B2 JPS5731304B2 (en) 1982-07-03

Family

ID=13040546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5690879A Granted JPS55150265A (en) 1979-05-11 1979-05-11 Flat type diode with pressing force strengthening mechanism

Country Status (1)

Country Link
JP (1) JPS55150265A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168256A (en) * 1982-03-30 1983-10-04 Fujitsu Ltd Semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62206105A (en) * 1986-03-07 1987-09-10 日本地下水開発株式会社 Water non-scattering snow removing method
JPS62206104A (en) * 1986-03-07 1987-09-10 日本地下水開発株式会社 Water non-scattering snow removing method
JPH04237703A (en) * 1991-01-16 1992-08-26 Nippon Chikasui Kaihatsu Corp Ltd Constructing method for snow melting facility with no sprinkling

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5049980A (en) * 1973-09-03 1975-05-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5049980A (en) * 1973-09-03 1975-05-06

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168256A (en) * 1982-03-30 1983-10-04 Fujitsu Ltd Semiconductor device
JPH0336303B2 (en) * 1982-03-30 1991-05-31 Fujitsu Ltd

Also Published As

Publication number Publication date
JPS5731304B2 (en) 1982-07-03

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