JPS5799726A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5799726A JPS5799726A JP17640580A JP17640580A JPS5799726A JP S5799726 A JPS5799726 A JP S5799726A JP 17640580 A JP17640580 A JP 17640580A JP 17640580 A JP17640580 A JP 17640580A JP S5799726 A JPS5799726 A JP S5799726A
- Authority
- JP
- Japan
- Prior art keywords
- region
- diffusion
- faulty
- type
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 238000009792 diffusion process Methods 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract 3
- 239000011574 phosphorus Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 230000002159 abnormal effect Effects 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 101500027295 Homo sapiens Sperm histone HP3 Proteins 0.000 abstract 1
- 102400000926 Sperm histone HP3 Human genes 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66363—Thyristors
- H01L29/66371—Thyristors structurally associated with another device, e.g. built-in diode
- H01L29/66378—Thyristors structurally associated with another device, e.g. built-in diode the other device being a controlling field-effect device
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To eliminate the production faulty elements due to abnormal diffusion by a method wherein after a faulty region developed during an epitaxial growth process on a surface of a substrate is covered with an oxide film, and with a phosphorus glass film formed during an N type impurity diffusion applied on this oxide film, an electrodes are fabricated. CONSTITUTION:For example on a manufacturing process of a GTO, after a P type region P2' is diffused on an N type substrate N1 and buried gate P3 is formed, a P type epitaxial layer P2'' is grown. After an SiO2 film is formed on this substrate, surfaces are for example optically inspected, a resist mask R is applied on a region Y where a faulty region F developed during an epitaxial growth and no N type diffusion layer is formed, and the SiO2 film is etched. Next after diffusion of phosphorus from a region where an SiO2 film is removed, an electrode is formed so that the SiO2 film on the faulty region F may be covered with a phosphorus glass layer PG formed during diffusion. By this method an abnormal diffusion through the faulty region F is prevented, and without reducing an effective area of the apparatus having a large area, degradation of characteristics can be eliminated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17640580A JPS5799726A (en) | 1980-12-13 | 1980-12-13 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17640580A JPS5799726A (en) | 1980-12-13 | 1980-12-13 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5799726A true JPS5799726A (en) | 1982-06-21 |
| JPH0258767B2 JPH0258767B2 (en) | 1990-12-10 |
Family
ID=16013093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17640580A Granted JPS5799726A (en) | 1980-12-13 | 1980-12-13 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5799726A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53138292A (en) * | 1977-05-06 | 1978-12-02 | Bbc Brown Boveri & Cie | Method of producing semiconductor |
-
1980
- 1980-12-13 JP JP17640580A patent/JPS5799726A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53138292A (en) * | 1977-05-06 | 1978-12-02 | Bbc Brown Boveri & Cie | Method of producing semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0258767B2 (en) | 1990-12-10 |
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