JPS5797665A - Manufacture of npn transistor - Google Patents

Manufacture of npn transistor

Info

Publication number
JPS5797665A
JPS5797665A JP55173102A JP17310280A JPS5797665A JP S5797665 A JPS5797665 A JP S5797665A JP 55173102 A JP55173102 A JP 55173102A JP 17310280 A JP17310280 A JP 17310280A JP S5797665 A JPS5797665 A JP S5797665A
Authority
JP
Japan
Prior art keywords
solution
temperature
slowly
grow
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55173102A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0142144B2 (enrdf_load_stackoverflow
Inventor
Michihiko Arai
Masaaki Sakuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP55173102A priority Critical patent/JPS5797665A/ja
Publication of JPS5797665A publication Critical patent/JPS5797665A/ja
Publication of JPH0142144B2 publication Critical patent/JPH0142144B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP55173102A 1980-12-10 1980-12-10 Manufacture of npn transistor Granted JPS5797665A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55173102A JPS5797665A (en) 1980-12-10 1980-12-10 Manufacture of npn transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55173102A JPS5797665A (en) 1980-12-10 1980-12-10 Manufacture of npn transistor

Publications (2)

Publication Number Publication Date
JPS5797665A true JPS5797665A (en) 1982-06-17
JPH0142144B2 JPH0142144B2 (enrdf_load_stackoverflow) 1989-09-11

Family

ID=15954208

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55173102A Granted JPS5797665A (en) 1980-12-10 1980-12-10 Manufacture of npn transistor

Country Status (1)

Country Link
JP (1) JPS5797665A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61159725A (ja) * 1984-12-29 1986-07-19 Toyota Central Res & Dev Lab Inc 化合物半導体液相成長法
JPH01179452A (ja) * 1988-01-06 1989-07-17 Nec Corp ヘテロ接合半導体装置及びその製造方法
JPH01179453A (ja) * 1988-01-06 1989-07-17 Nec Corp ヘテロ接合半導体装置及びその製造方法
JPH01179454A (ja) * 1988-01-06 1989-07-17 Nec Corp ヘテロ接合半導体装置及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919787A (enrdf_load_stackoverflow) * 1972-06-14 1974-02-21

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919787A (enrdf_load_stackoverflow) * 1972-06-14 1974-02-21

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61159725A (ja) * 1984-12-29 1986-07-19 Toyota Central Res & Dev Lab Inc 化合物半導体液相成長法
JPH01179452A (ja) * 1988-01-06 1989-07-17 Nec Corp ヘテロ接合半導体装置及びその製造方法
JPH01179453A (ja) * 1988-01-06 1989-07-17 Nec Corp ヘテロ接合半導体装置及びその製造方法
JPH01179454A (ja) * 1988-01-06 1989-07-17 Nec Corp ヘテロ接合半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPH0142144B2 (enrdf_load_stackoverflow) 1989-09-11

Similar Documents

Publication Publication Date Title
US2727840A (en) Methods of producing semiconductive bodies
JPS5797665A (en) Manufacture of npn transistor
JPS5423386A (en) Manufacture of semiconductor device
JPS55163835A (en) Selective liquid phase growth of on semiconductor region
JPS5361577A (en) Growing method for horizontally pulled ribbon crystal
JPS5649520A (en) Vapor growth of compound semiconductor
JPS5796566A (en) Manufacture of p-n-p transistor
JPS57184229A (en) Manufacture of semiconductor device
JPS52114268A (en) Selective liquid growing method
GB1376973A (en) Method of growing monocrystalline semiconductor material
JPS5478377A (en) Method and apparatus for growing semiconductor crystal
JPS5351964A (en) Selective growth method for semiconductor crystal
FR2137160A1 (en) Monocrystalline semiconductor substrate prodn - with low specific resistance
JPS57199287A (en) Semiconductor luminous element and manufacture thereof
JPS5550619A (en) Manufacturing single crystal
JPS57175796A (en) Liquid phase epitaxial growth
JPS5673700A (en) Liquid phase epitaxially growing method
JPS55117231A (en) Growing method of crystal
JPS52111473A (en) Ribbon crystal growth method
JPS52120763A (en) Silicon epitaxial growth method
JPS5289599A (en) Liquid phase eptaxial growth
JPS5747798A (en) Liquid phase epitaxial growing method
JPS5219088A (en) Production mehtod of semiconductor device
JPS52155188A (en) Liquid phase growth of semiconductor crystal
JPS5649519A (en) Vapor growth of compound semiconductor