JPS5796568A - Semiconductor device and high-voltage circuit using said device - Google Patents

Semiconductor device and high-voltage circuit using said device

Info

Publication number
JPS5796568A
JPS5796568A JP55173530A JP17353080A JPS5796568A JP S5796568 A JPS5796568 A JP S5796568A JP 55173530 A JP55173530 A JP 55173530A JP 17353080 A JP17353080 A JP 17353080A JP S5796568 A JPS5796568 A JP S5796568A
Authority
JP
Japan
Prior art keywords
drain
type
gate
source
intermediate terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55173530A
Other languages
English (en)
Japanese (ja)
Other versions
JPS645473B2 (enrdf_load_stackoverflow
Inventor
Toshihide Kuriyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55173530A priority Critical patent/JPS5796568A/ja
Publication of JPS5796568A publication Critical patent/JPS5796568A/ja
Publication of JPS645473B2 publication Critical patent/JPS645473B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6717—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions the source and the drain regions being asymmetrical

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP55173530A 1980-12-09 1980-12-09 Semiconductor device and high-voltage circuit using said device Granted JPS5796568A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55173530A JPS5796568A (en) 1980-12-09 1980-12-09 Semiconductor device and high-voltage circuit using said device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55173530A JPS5796568A (en) 1980-12-09 1980-12-09 Semiconductor device and high-voltage circuit using said device

Publications (2)

Publication Number Publication Date
JPS5796568A true JPS5796568A (en) 1982-06-15
JPS645473B2 JPS645473B2 (enrdf_load_stackoverflow) 1989-01-30

Family

ID=15962233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55173530A Granted JPS5796568A (en) 1980-12-09 1980-12-09 Semiconductor device and high-voltage circuit using said device

Country Status (1)

Country Link
JP (1) JPS5796568A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS645473B2 (enrdf_load_stackoverflow) 1989-01-30

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