JPS645473B2 - - Google Patents
Info
- Publication number
- JPS645473B2 JPS645473B2 JP55173530A JP17353080A JPS645473B2 JP S645473 B2 JPS645473 B2 JP S645473B2 JP 55173530 A JP55173530 A JP 55173530A JP 17353080 A JP17353080 A JP 17353080A JP S645473 B2 JPS645473 B2 JP S645473B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- drain region
- voltage
- insulating substrate
- offset gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
- H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
- H10D30/6717—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions the source and the drain regions being asymmetrical
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55173530A JPS5796568A (en) | 1980-12-09 | 1980-12-09 | Semiconductor device and high-voltage circuit using said device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55173530A JPS5796568A (en) | 1980-12-09 | 1980-12-09 | Semiconductor device and high-voltage circuit using said device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5796568A JPS5796568A (en) | 1982-06-15 |
| JPS645473B2 true JPS645473B2 (enrdf_load_stackoverflow) | 1989-01-30 |
Family
ID=15962233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55173530A Granted JPS5796568A (en) | 1980-12-09 | 1980-12-09 | Semiconductor device and high-voltage circuit using said device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5796568A (enrdf_load_stackoverflow) |
-
1980
- 1980-12-09 JP JP55173530A patent/JPS5796568A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5796568A (en) | 1982-06-15 |
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