JPS5795681A - Impurity diffusion method of compound semiconductor - Google Patents
Impurity diffusion method of compound semiconductorInfo
- Publication number
- JPS5795681A JPS5795681A JP55171622A JP17162280A JPS5795681A JP S5795681 A JPS5795681 A JP S5795681A JP 55171622 A JP55171622 A JP 55171622A JP 17162280 A JP17162280 A JP 17162280A JP S5795681 A JPS5795681 A JP S5795681A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- diffusion
- make
- selectively
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 title abstract 5
- 239000012535 impurity Substances 0.000 title abstract 4
- 150000001875 compounds Chemical class 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
Abstract
PURPOSE:To diffuse impurities precisely controlling density without deteriorating crystalline by selectively providing a second conductive type layer of a predetermined shape in the first conductive type layer of a compound semiconductor device. CONSTITUTION:An n type In0.53Ga0.47AS12, n type In0.7Ga0.3As0.47P0.5313, n type InP14 and p type In0.53Ga0.47As15 are laminated on an n<+> type InP substrate 11. The layer 15 is selectively eched with a mixture of sulfuric acid and hydrogen proxide solution and covered with a CVDSiO2 film 16, heat treated for 10-40hr at 650 deg.C to make a p type impurity diffusion layer 17 in the n layer 14. After removing the layer 15, an SiO218 is formed to selectively make a window out of the layer 18 in the peripheral region of the p type layer 17. A Cd heat diffusion layer 14 is formed in the layer 14 near the layer 13. Again it is covered with SiO218 to make electrode window smaller than the layer 19, and p type electrode 20 is fitted to complete the device on the substrate 11. In this construction there is no limits to the impurity for the layer 19 and a high density diffusion becomes possible and there is no stress on the interface at the time of diffusion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55171622A JPS5795681A (en) | 1980-12-05 | 1980-12-05 | Impurity diffusion method of compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55171622A JPS5795681A (en) | 1980-12-05 | 1980-12-05 | Impurity diffusion method of compound semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5795681A true JPS5795681A (en) | 1982-06-14 |
Family
ID=15926581
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55171622A Pending JPS5795681A (en) | 1980-12-05 | 1980-12-05 | Impurity diffusion method of compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5795681A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5179430A (en) * | 1988-05-24 | 1993-01-12 | Nec Corporation | Planar type heterojunction avalanche photodiode |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4975266A (en) * | 1972-11-22 | 1974-07-19 | ||
| JPS55145339A (en) * | 1979-04-27 | 1980-11-12 | Fujitsu Ltd | Photo semiconductor device and its manufacture |
-
1980
- 1980-12-05 JP JP55171622A patent/JPS5795681A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4975266A (en) * | 1972-11-22 | 1974-07-19 | ||
| JPS55145339A (en) * | 1979-04-27 | 1980-11-12 | Fujitsu Ltd | Photo semiconductor device and its manufacture |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5179430A (en) * | 1988-05-24 | 1993-01-12 | Nec Corporation | Planar type heterojunction avalanche photodiode |
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