JPS5793581A - Diode - Google Patents

Diode

Info

Publication number
JPS5793581A
JPS5793581A JP17008080A JP17008080A JPS5793581A JP S5793581 A JPS5793581 A JP S5793581A JP 17008080 A JP17008080 A JP 17008080A JP 17008080 A JP17008080 A JP 17008080A JP S5793581 A JPS5793581 A JP S5793581A
Authority
JP
Japan
Prior art keywords
junction
main
prescribed depth
sub
junction surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17008080A
Other languages
Japanese (ja)
Other versions
JPH0516195B2 (en
Inventor
Toshihiko Aimi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17008080A priority Critical patent/JPS5793581A/en
Publication of JPS5793581A publication Critical patent/JPS5793581A/en
Publication of JPH0516195B2 publication Critical patent/JPH0516195B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain an excellent pressure resistance stability and electric characteristics in a diode by forming a P-N junction of a main junction surface in the prescribed depth and sub junction surface deeper than that main junction surrounding the main junction and forming a groove shallower than the prescribed depth on the sub junction surface. CONSTITUTION:A P-N junction surface is formed of a main junction surface of the prescribed depth and a sub junction surface surrounding the main junction and a depth deeper than the prescribed depth. The end of the P-N junction is exposed on the main surface side, and a groove shallower than the prescribed depth is formed on the sub junction surface. For example, a junction 6 deeper than the main junction 2 is selectively diffused in the N type silicon substrate 1. Subsequently, the main junction 2 is selectively diffused, a groove 7 is so formed as to contain the part of the deep junction 6, and a glass layer 3 is further covered thereon. Thereafter, upper and lower electrodes 4, 5 are formed. Thus, the diode having excellent pressure resistance stability and electric characteristics can be obtained.
JP17008080A 1980-12-02 1980-12-02 Diode Granted JPS5793581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17008080A JPS5793581A (en) 1980-12-02 1980-12-02 Diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17008080A JPS5793581A (en) 1980-12-02 1980-12-02 Diode

Publications (2)

Publication Number Publication Date
JPS5793581A true JPS5793581A (en) 1982-06-10
JPH0516195B2 JPH0516195B2 (en) 1993-03-03

Family

ID=15898263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17008080A Granted JPS5793581A (en) 1980-12-02 1980-12-02 Diode

Country Status (1)

Country Link
JP (1) JPS5793581A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831023A (en) * 1972-07-27 1973-04-24
JPS4977581A (en) * 1972-11-27 1974-07-26
JPS50127577A (en) * 1974-03-14 1975-10-07
JPS5227274A (en) * 1975-08-25 1977-03-01 Hitachi Ltd Semiconductor unit and its manufacturing process

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831023A (en) * 1972-07-27 1973-04-24
JPS4977581A (en) * 1972-11-27 1974-07-26
JPS50127577A (en) * 1974-03-14 1975-10-07
JPS5227274A (en) * 1975-08-25 1977-03-01 Hitachi Ltd Semiconductor unit and its manufacturing process

Also Published As

Publication number Publication date
JPH0516195B2 (en) 1993-03-03

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