JPS5793548A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5793548A
JPS5793548A JP17039580A JP17039580A JPS5793548A JP S5793548 A JPS5793548 A JP S5793548A JP 17039580 A JP17039580 A JP 17039580A JP 17039580 A JP17039580 A JP 17039580A JP S5793548 A JPS5793548 A JP S5793548A
Authority
JP
Japan
Prior art keywords
window
psg film
layers
reduced pressure
pressure cvd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17039580A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6160580B2 (enrdf_load_stackoverflow
Inventor
Kazunori Imaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17039580A priority Critical patent/JPS5793548A/ja
Publication of JPS5793548A publication Critical patent/JPS5793548A/ja
Publication of JPS6160580B2 publication Critical patent/JPS6160580B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP17039580A 1980-12-03 1980-12-03 Manufacture of semiconductor device Granted JPS5793548A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17039580A JPS5793548A (en) 1980-12-03 1980-12-03 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17039580A JPS5793548A (en) 1980-12-03 1980-12-03 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5793548A true JPS5793548A (en) 1982-06-10
JPS6160580B2 JPS6160580B2 (enrdf_load_stackoverflow) 1986-12-22

Family

ID=15904125

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17039580A Granted JPS5793548A (en) 1980-12-03 1980-12-03 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5793548A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6110256A (ja) * 1984-06-14 1986-01-17 コミツサレ・ア・レナジイ・アトミツク 集積回路の接点孔への相互接続線の自動位置決め方法
JPS62217636A (ja) * 1986-03-19 1987-09-25 Fujitsu Ltd 半導体装置の製造方法
US5093275A (en) * 1989-09-22 1992-03-03 The Board Of Regents, The University Of Texas System Method for forming hot-carrier suppressed sub-micron MISFET device
US5234863A (en) * 1990-12-11 1993-08-10 Seiko Instruments Inc. Method of manufacturing doped contacts to semiconductor devices

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6110256A (ja) * 1984-06-14 1986-01-17 コミツサレ・ア・レナジイ・アトミツク 集積回路の接点孔への相互接続線の自動位置決め方法
JPS62217636A (ja) * 1986-03-19 1987-09-25 Fujitsu Ltd 半導体装置の製造方法
US5093275A (en) * 1989-09-22 1992-03-03 The Board Of Regents, The University Of Texas System Method for forming hot-carrier suppressed sub-micron MISFET device
US5234863A (en) * 1990-12-11 1993-08-10 Seiko Instruments Inc. Method of manufacturing doped contacts to semiconductor devices

Also Published As

Publication number Publication date
JPS6160580B2 (enrdf_load_stackoverflow) 1986-12-22

Similar Documents

Publication Publication Date Title
JPS55163860A (en) Manufacture of semiconductor device
JPS5599722A (en) Preparation of semiconductor device
JPS5793548A (en) Manufacture of semiconductor device
JPS5772321A (en) Manufacture of seiconductor device
JPS6457717A (en) Manufacture of semiconductor device
JPS5764927A (en) Manufacture of semiconductor device
JPS56165339A (en) Semiconductor device
JPS5513904A (en) Semiconductor device and its manufacturing method
JPS5740967A (en) Integrated circuit device
JPS5583264A (en) Method of fabricating mos semiconductor device
JPS5687346A (en) Manufacture of semiconductor device
JPS55138857A (en) Semiconductor device
JPS56160052A (en) Semiconductor device
EP0228183A3 (en) Method for manufacturing semiconductor device
JPS57147252A (en) Multilayer wiring method
JPS57132364A (en) Semiconductor integrated circuit device
JPS5363986A (en) Production of semiconductor device
JPS55117257A (en) Fabrication of semiconductor device
JPS6421965A (en) Mos transistor
JPS57181143A (en) Manufacture of semiconductor device
JPS551157A (en) Method of fabricating semiconductor device
JPS55138833A (en) Manufacture of semiconductor device
JPS5775459A (en) Manufacture of semiconductor device
JPS5710948A (en) Semiconductor device
JPS57153441A (en) Semiconductor device