JPS5789222A - Flattening method of wafer - Google Patents

Flattening method of wafer

Info

Publication number
JPS5789222A
JPS5789222A JP16564080A JP16564080A JPS5789222A JP S5789222 A JPS5789222 A JP S5789222A JP 16564080 A JP16564080 A JP 16564080A JP 16564080 A JP16564080 A JP 16564080A JP S5789222 A JPS5789222 A JP S5789222A
Authority
JP
Japan
Prior art keywords
wafer
adhesive
thickness
exposed
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16564080A
Other languages
Japanese (ja)
Inventor
Mamoru Nakasuji
Tadahiro Takigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16564080A priority Critical patent/JPS5789222A/en
Publication of JPS5789222A publication Critical patent/JPS5789222A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Abstract

PURPOSE:To flatten an exposed surface of a wafer with location varying in thickness and better drawing accuracy, by providing a specimen rack with an adhesive on the back, after vacuum-chucking a wafer surface on the flat reference surface. CONSTITUTION:An exposed surface of a wafer with location varying in thickness is pressed to the reference surface. The back of the wafer is mounted to a specimen rack with an adhesive, then the adhesive is dried and hardened. A method is provided to obtain the wafer with the flattened exposed surface after releasing the pressing. For instance, the surface (exposed) of a wafer 1 with location varying in thickness is vacuum-sucked by vacuum chuck 4. The wafer 1 surface is flattened by pressing on a base 5 surface with good flatness. With this condition remaining, the back of the wafer 1 is coated with an adhesive 2 thicker than location variation in thickness. After mounting to a specimen rack 3 with intense rigidity, drying, and hardening, the surface is kept flat.
JP16564080A 1980-11-25 1980-11-25 Flattening method of wafer Pending JPS5789222A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16564080A JPS5789222A (en) 1980-11-25 1980-11-25 Flattening method of wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16564080A JPS5789222A (en) 1980-11-25 1980-11-25 Flattening method of wafer

Publications (1)

Publication Number Publication Date
JPS5789222A true JPS5789222A (en) 1982-06-03

Family

ID=15816197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16564080A Pending JPS5789222A (en) 1980-11-25 1980-11-25 Flattening method of wafer

Country Status (1)

Country Link
JP (1) JPS5789222A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0464311A (en) * 1990-07-03 1992-02-28 Kokuyo Co Ltd Housing furniture

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0464311A (en) * 1990-07-03 1992-02-28 Kokuyo Co Ltd Housing furniture

Similar Documents

Publication Publication Date Title
JPS5789222A (en) Flattening method of wafer
JPS53122392A (en) Manufacture for photo electric device
JPS57128939A (en) Vacuum chuck mechanism of wafer fixing apparatus
JPS5229792A (en) Method of determining adhesion of films
JPS52155494A (en) Process for w orking parallel plane of wafer
JPS5437581A (en) Wafer etching device
JPS5691441A (en) Method and device for sticking sheet to carrier jig
JPS53111594A (en) Method of mounting workpiece on holder
JPS5571043A (en) Semiconductor device
JPS57182189A (en) Manufacture and device for dial plate for watch
JPS55124232A (en) Application method of substrate treatment solution and the device therefor
JPS5432992A (en) Device and method for manufacturing semiconductor device
JPS54107976A (en) Device for supporting base sheet in the manufacture of decorative sheet
JPS53124077A (en) Chucking for wafer
JPS55142350A (en) Shotening apparatus for vacuum contact time of composer for offset printing
JPS53112673A (en) Mask alignment method in semiconductor device manufacturing process and photo mask used for its execution
JPS5533090A (en) Etching method
JPS56133833A (en) Shaping of thin layer
JPS57100719A (en) Manufacture of semiconductor device
JPS5492065A (en) Measuring method for manufacturing process evaluation of semiconductor device
JPS6445567A (en) Semiconductor wafer applying method and device
JPS5795632A (en) Jig for etching back surface of semiconductor wafer
JPS5710226A (en) Manufacturing apparatus for amorphous semiconductor film
JPS5556638A (en) Apparatus for manufacturing semiconductor device
JPS57169257A (en) Exfoliating device for semiconductor element