JPS5492065A - Measuring method for manufacturing process evaluation of semiconductor device - Google Patents

Measuring method for manufacturing process evaluation of semiconductor device

Info

Publication number
JPS5492065A
JPS5492065A JP15780777A JP15780777A JPS5492065A JP S5492065 A JPS5492065 A JP S5492065A JP 15780777 A JP15780777 A JP 15780777A JP 15780777 A JP15780777 A JP 15780777A JP S5492065 A JPS5492065 A JP S5492065A
Authority
JP
Japan
Prior art keywords
electrode
insulating film
metal
film
rod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15780777A
Other languages
Japanese (ja)
Inventor
Takeshige Ichimura
Yukio Takeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP15780777A priority Critical patent/JPS5492065A/en
Publication of JPS5492065A publication Critical patent/JPS5492065A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond

Abstract

PURPOSE: To facilitate the evaluation under process and thus to secure the quick feedback to the production by securing a touch of the metal wire onto the insulating film provided on the semiconductor and then applying the pressure to the metal wire via the metal rod to be used as the measurement electrode.
CONSTITUTION: Metal wire 3 of Al, Au, Pt, Ag or the like is placed on SiO2 film or Si3N4 film 2 which is coated on Si substrate 1 during the manufacturing processes. Then the pressure bonding is given via metal rod 4 to obtain the MIS structure. In this connection, wire 3 or rod 4 is used as the electrode at one side, and the metal plate provided under substrate 1 is used as the electrode of the other side in order to measure the C-V property. In this way, the thickness of the electrode or the insulating film at the interface between the semiconductor and the insulating film can be known even in the course of the manufacturing processes. As a result, the quick and assured feedback becomes possible.
COPYRIGHT: (C)1979,JPO&Japio
JP15780777A 1977-12-29 1977-12-29 Measuring method for manufacturing process evaluation of semiconductor device Pending JPS5492065A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15780777A JPS5492065A (en) 1977-12-29 1977-12-29 Measuring method for manufacturing process evaluation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15780777A JPS5492065A (en) 1977-12-29 1977-12-29 Measuring method for manufacturing process evaluation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5492065A true JPS5492065A (en) 1979-07-20

Family

ID=15657707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15780777A Pending JPS5492065A (en) 1977-12-29 1977-12-29 Measuring method for manufacturing process evaluation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5492065A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0470521A2 (en) * 1990-08-10 1992-02-12 Texas Instruments Incorporated Measurement of semiconductor parameters at cryogenic temperatures using a spring contact probe

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0470521A2 (en) * 1990-08-10 1992-02-12 Texas Instruments Incorporated Measurement of semiconductor parameters at cryogenic temperatures using a spring contact probe
EP0470521A3 (en) * 1990-08-10 1994-03-30 Texas Instruments Inc

Similar Documents

Publication Publication Date Title
JPS5728322A (en) Formation of semiconductor single crystal layer
JPS5492065A (en) Measuring method for manufacturing process evaluation of semiconductor device
JPS51134684A (en) Method and equipment to measure the corrosion resistance of coated met al plate
JPS5523437A (en) Manufacture of prove unit for semiconductor wafer test
JPS5577164A (en) Semiconductor device
JPS53102670A (en) Lead bending method for glass ceramic package type semiconductor device
JPS5563708A (en) Thickness measuring method for anticorrosive film
JPS54157479A (en) Electrode terminal forming method to wiring connecting semiconductor elements
SU636473A1 (en) Method of manufacturing high-temperature strain-gauges
SU1711271A1 (en) Method of production of electric contact to semiconductor or dielectric material
JPS5554431A (en) Method and device for tension test
JPS572550A (en) Testing method for semiconductor device
JPS5441673A (en) Semiconductor device and its manufacture
JPS5687366A (en) Manufacture of semiconductor device
JPS5292742A (en) Measuring method for welding groove gap
JPS6479608A (en) Method for measuring intermediate mixed layer of multilayer resist
JPS5355185A (en) Method and apparatus for test piece measurement
JPS5789222A (en) Flattening method of wafer
JPS5717873A (en) Inspection method of semiconductor element
SU1418628A1 (en) Method of determining distribution of space charge in dielectric-semiconductor structure
JPS61290317A (en) Measurement for thickness of thin film
JPS5696875A (en) Semiconductor pressure sensing device and manufacture thereof
JPS56122903A (en) Method and device for measurement of inside coating film thickness of can
JPS55158564A (en) Measuring method for resistance value dispersion of resistance element
GB2020827A (en) Measurement of Electrical Characteristics of In-process Semiconductor Devices