GB2020827A - Measurement of Electrical Characteristics of In-process Semiconductor Devices - Google Patents

Measurement of Electrical Characteristics of In-process Semiconductor Devices

Info

Publication number
GB2020827A
GB2020827A GB7912708A GB7912708A GB2020827A GB 2020827 A GB2020827 A GB 2020827A GB 7912708 A GB7912708 A GB 7912708A GB 7912708 A GB7912708 A GB 7912708A GB 2020827 A GB2020827 A GB 2020827A
Authority
GB
United Kingdom
Prior art keywords
probe
semiconductor devices
electrical characteristics
process semiconductor
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7912708A
Other versions
GB2020827B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arris Technology Inc
Original Assignee
Arris Technology Inc
General Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arris Technology Inc, General Instrument Corp filed Critical Arris Technology Inc
Publication of GB2020827A publication Critical patent/GB2020827A/en
Application granted granted Critical
Publication of GB2020827B publication Critical patent/GB2020827B/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices

Abstract

In a method of measuring the electrical characteristics of in-process semiconductor devices having an insulating layer and a substrate, prior to the metallization thereof a probe is placed in contact with the device to be tested at a location on the surface of on the insulating layer thereof where the gate will eventually be formed. An intermittent electrical signal is generated by a ramp generator 44 or pulse generator 40 and applied to the probe on line 24. A drive signal is generated by oscillator 26 and applied to the substrate on line 28. A phase comparison is made in detector 30 between the signal on the probe and the drive signal using a C-V plotter to obtain measurements of the electrical properties of the device. The output may also be derived in a meter 38. The probe is a pure gold wire with a ball tip which is cleaned and coated with mercury to form a gold/mercury alloy. <IMAGE>
GB7912708A 1978-05-15 1979-04-11 Measurement of electrical characteristics of in-process semiconductor devices Expired GB2020827B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US90560078A 1978-05-15 1978-05-15

Publications (2)

Publication Number Publication Date
GB2020827A true GB2020827A (en) 1979-11-21
GB2020827B GB2020827B (en) 1982-10-20

Family

ID=25421114

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7912708A Expired GB2020827B (en) 1978-05-15 1979-04-11 Measurement of electrical characteristics of in-process semiconductor devices

Country Status (2)

Country Link
JP (1) JPS54149590A (en)
GB (1) GB2020827B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7525327B2 (en) 2004-08-13 2009-04-28 Shin-Etsu Handotai Co., Ltd. Apparatus for evaluating semiconductor wafer

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5992584A (en) * 1982-11-18 1984-05-28 Agency Of Ind Science & Technol Probe for testing superconductive thin film functional integrated circuit element

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5066178A (en) * 1973-10-12 1975-06-04
JPS5223225B2 (en) * 1974-03-01 1977-06-22

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7525327B2 (en) 2004-08-13 2009-04-28 Shin-Etsu Handotai Co., Ltd. Apparatus for evaluating semiconductor wafer

Also Published As

Publication number Publication date
JPS5710572B2 (en) 1982-02-26
JPS54149590A (en) 1979-11-22
GB2020827B (en) 1982-10-20

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 19990410