KR950021322A - Measuring method of micro contact hole in semiconductor small intestine - Google Patents

Measuring method of micro contact hole in semiconductor small intestine Download PDF

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Publication number
KR950021322A
KR950021322A KR1019930031898A KR930031898A KR950021322A KR 950021322 A KR950021322 A KR 950021322A KR 1019930031898 A KR1019930031898 A KR 1019930031898A KR 930031898 A KR930031898 A KR 930031898A KR 950021322 A KR950021322 A KR 950021322A
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KR
South Korea
Prior art keywords
contact hole
measuring
small intestine
micro contact
measuring method
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Application number
KR1019930031898A
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Korean (ko)
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KR970010669B1 (en
Inventor
박기엽
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930031898A priority Critical patent/KR970010669B1/en
Publication of KR950021322A publication Critical patent/KR950021322A/en
Application granted granted Critical
Publication of KR970010669B1 publication Critical patent/KR970010669B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

본 발명은 반도체 소자의 미세 콘택홀 측정방법에 관한 것으로, 절연막의 상부, 즉 감광막의 하부에 전기 전도도가 비교적 큰 도전체막을 일정두께 적층하여 전기 전도도가 높은 도전체막으로 인하여 대전을 유발하는 축적 전자가 콘택홀 외부로 빠져 나가게하여 정학한 콘택홀의 크기를 측정할 수 있는 기술이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for measuring a fine contact hole in a semiconductor device, wherein a conductive film having a relatively high electrical conductivity is laminated to a predetermined thickness on an upper portion of an insulating film, i. It is a technology that can measure the size of the contact hole by allowing the exit out of the contact hole.

Description

반도체 소자의 미세 콘택홀 측정방법.Micro contact hole measurement method of a semiconductor device.

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3A도 내지 제3C도는 본 발명의 미세콘택홀 형성공정을 도시한 단면도.3A to 3C are cross-sectional views showing a process for forming a micro contact hole of the present invention.

제4도는 본 발명의 미세콘택홀 형성을 위한 패턴 공정시 전자선을 이용한 콘택홀 크기 측정 모형도.4 is a contact hole size measurement model diagram using an electron beam during the pattern process for forming a micro contact hole of the present invention.

Claims (2)

반도체 소자의 미세콘택홀 측정방법에 있어서, 실리콘 기판 상부에 절연막을 적충하고 콘택홀을 형성하기 위한 감광막 패턴 하부에 도전체막을 적충하여 콘택홀 크기 측정시 정확한 콘택홀을 측정하도록 한 것을 특징으로 하는 반도체 소장의 미세콘택홀 측정방법.In the method for measuring a micro contact hole of a semiconductor device, an insulating film is deposited on an upper portion of a silicon substrate and a conductive film is deposited on a lower portion of a photoresist pattern for forming a contact hole, thereby measuring an accurate contact hole when measuring a contact hole size. Method for measuring micro contact hole in semiconductor small intestine. 제1항에 있어서, 상기 도전체막은 알루미늄합금, 텅스텐, 다결정실리콘중 어느 하나로 이루어지는 것을 특징으로 하는 반도체 소자의 미세콘택홀 측정방법.The method of claim 1, wherein the conductor film is made of any one of aluminum alloy, tungsten, and polycrystalline silicon. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930031898A 1993-12-31 1993-12-31 Measurment method of contact hole of a semiconductor KR970010669B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930031898A KR970010669B1 (en) 1993-12-31 1993-12-31 Measurment method of contact hole of a semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930031898A KR970010669B1 (en) 1993-12-31 1993-12-31 Measurment method of contact hole of a semiconductor

Publications (2)

Publication Number Publication Date
KR950021322A true KR950021322A (en) 1995-07-26
KR970010669B1 KR970010669B1 (en) 1997-06-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930031898A KR970010669B1 (en) 1993-12-31 1993-12-31 Measurment method of contact hole of a semiconductor

Country Status (1)

Country Link
KR (1) KR970010669B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100355772B1 (en) * 1999-12-31 2002-10-19 아남반도체 주식회사 Method for measuring a hole pattern in a scanning electronic microscope
KR100807082B1 (en) * 2001-12-29 2008-02-25 주식회사 하이닉스반도체 Method of forming a contact in a semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100355772B1 (en) * 1999-12-31 2002-10-19 아남반도체 주식회사 Method for measuring a hole pattern in a scanning electronic microscope
KR100807082B1 (en) * 2001-12-29 2008-02-25 주식회사 하이닉스반도체 Method of forming a contact in a semiconductor device

Also Published As

Publication number Publication date
KR970010669B1 (en) 1997-06-30

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