JPS55158564A - Measuring method for resistance value dispersion of resistance element - Google Patents

Measuring method for resistance value dispersion of resistance element

Info

Publication number
JPS55158564A
JPS55158564A JP6667479A JP6667479A JPS55158564A JP S55158564 A JPS55158564 A JP S55158564A JP 6667479 A JP6667479 A JP 6667479A JP 6667479 A JP6667479 A JP 6667479A JP S55158564 A JPS55158564 A JP S55158564A
Authority
JP
Japan
Prior art keywords
resistance
bridge
measuring method
resistance element
dispersion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6667479A
Other languages
Japanese (ja)
Inventor
Shigeru Watari
Eisuke Ichinohe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6667479A priority Critical patent/JPS55158564A/en
Publication of JPS55158564A publication Critical patent/JPS55158564A/en
Pending legal-status Critical Current

Links

Landscapes

  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
  • Measurement Of Resistance Or Impedance (AREA)

Abstract

PURPOSE: To measure relative dispersion between resistance elements by means of a bridge resistance formed on each chip of IC as monitoring resistance element.
CONSTITUTION: Monitoring resistance elements R1, R2, R3 and R4 the same in the dimensions and form are formed in the chip. After the formation of the window for drawing the electrode, Al is evaporated to form measuring terminals (pads) A D. In this case, a resistance bridge (Wheatstone bridge) is formed by the resistance elements R1, R2, R3 and R4. The voltage at the mid-point of the Wheastone bridge is measured to calculate the dispersion of the resistance value of the resistance element made on the semiconductor substrate.
COPYRIGHT: (C)1980,JPO&Japio
JP6667479A 1979-05-28 1979-05-28 Measuring method for resistance value dispersion of resistance element Pending JPS55158564A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6667479A JPS55158564A (en) 1979-05-28 1979-05-28 Measuring method for resistance value dispersion of resistance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6667479A JPS55158564A (en) 1979-05-28 1979-05-28 Measuring method for resistance value dispersion of resistance element

Publications (1)

Publication Number Publication Date
JPS55158564A true JPS55158564A (en) 1980-12-10

Family

ID=13322691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6667479A Pending JPS55158564A (en) 1979-05-28 1979-05-28 Measuring method for resistance value dispersion of resistance element

Country Status (1)

Country Link
JP (1) JPS55158564A (en)

Similar Documents

Publication Publication Date Title
JPS55158564A (en) Measuring method for resistance value dispersion of resistance element
JPS56161649A (en) Measuring method of thermal resistance of semiconductor package
JPS5437582A (en) Measuring method for capacity of three-terminal semiconductor element
JPS57179758A (en) Method and device for measurement of temperature coefficient of resistance
JPS5775438A (en) Semiconductor element
JPS5313967A (en) Measuring method for characteristic of vibration gauge
JPS6466501A (en) Thickness measurement of insb single crystal wafer for compound substrate
JPS5349485A (en) Apparatus for measuring temperature of rotor
JPS5717873A (en) Inspection method of semiconductor element
SU661410A1 (en) Method of determining transient resistance of discontinuous-type contact couple
JPS5289973A (en) Semiconductor strain gauge bridge circuit
JPS5536921A (en) Pressure sensitive element
JPS52115188A (en) Prober
JPS5367351A (en) Measuring method of resistivity and intrinsic contact resistance
JPS5224079A (en) Measurement method of semiconductor apparatus
JPS53125771A (en) Measuring unit for semiconductor
JPS5537943A (en) Capacity type displacement measurement device
JPS5677970A (en) Magnetic bubble memory chip
JPS5336480A (en) Test method for semiconductor element
JPS5629341A (en) Measurement of properties of semiconductor device
JPS53114687A (en) Strain measuring device of semiconductor
JPS53107382A (en) Thermal conductivity measuring device of thin film form members
JPS5412840A (en) Measuring method for surface potential of electrophotographic photoreceptor by time series
JPS56137679A (en) Manufacture of semiconductor pressure sensor
BRIDGES Three-wire static strain gage apparatus[Patent]