JPS5778135A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS5778135A JPS5778135A JP55154359A JP15435980A JPS5778135A JP S5778135 A JPS5778135 A JP S5778135A JP 55154359 A JP55154359 A JP 55154359A JP 15435980 A JP15435980 A JP 15435980A JP S5778135 A JPS5778135 A JP S5778135A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- electrode
- aided
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
- H01L21/32155—Doping polycristalline - or amorphous silicon layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55154359A JPS5778135A (en) | 1980-11-01 | 1980-11-01 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55154359A JPS5778135A (en) | 1980-11-01 | 1980-11-01 | Semiconductor device and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5778135A true JPS5778135A (en) | 1982-05-15 |
| JPH0345555B2 JPH0345555B2 (ja) | 1991-07-11 |
Family
ID=15582426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55154359A Granted JPS5778135A (en) | 1980-11-01 | 1980-11-01 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5778135A (ja) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5954267A (ja) * | 1982-09-21 | 1984-03-29 | Seiko Epson Corp | 薄膜トランジスタの製造方法 |
| JPS59181064A (ja) * | 1983-03-31 | 1984-10-15 | Toshiba Corp | 半導体装置 |
| US4733284A (en) * | 1985-10-04 | 1988-03-22 | Hosiden Electronics Co., Ltd. | Semiconductor devices and laminates including phosphorus doped transparent conductive film |
| JP2007104475A (ja) * | 2005-10-06 | 2007-04-19 | Denso Corp | Ａ／ｄ変換方法及び装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS558092A (en) * | 1978-07-04 | 1980-01-21 | Nec Corp | Fine film solar cell and its production method |
-
1980
- 1980-11-01 JP JP55154359A patent/JPS5778135A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS558092A (en) * | 1978-07-04 | 1980-01-21 | Nec Corp | Fine film solar cell and its production method |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5954267A (ja) * | 1982-09-21 | 1984-03-29 | Seiko Epson Corp | 薄膜トランジスタの製造方法 |
| JPH0542816B2 (ja) * | 1982-09-21 | 1993-06-29 | Seiko Epson Corp | |
| JPS59181064A (ja) * | 1983-03-31 | 1984-10-15 | Toshiba Corp | 半導体装置 |
| US4733284A (en) * | 1985-10-04 | 1988-03-22 | Hosiden Electronics Co., Ltd. | Semiconductor devices and laminates including phosphorus doped transparent conductive film |
| JP2007104475A (ja) * | 2005-10-06 | 2007-04-19 | Denso Corp | Ａ／ｄ変換方法及び装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0345555B2 (ja) | 1991-07-11 |
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