JPS5775427A - Manufacture of mask for exposure to x-ray - Google Patents

Manufacture of mask for exposure to x-ray

Info

Publication number
JPS5775427A
JPS5775427A JP15180780A JP15180780A JPS5775427A JP S5775427 A JPS5775427 A JP S5775427A JP 15180780 A JP15180780 A JP 15180780A JP 15180780 A JP15180780 A JP 15180780A JP S5775427 A JPS5775427 A JP S5775427A
Authority
JP
Japan
Prior art keywords
si3n4 film
sih4
mask
ray
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15180780A
Other languages
English (en)
Other versions
JPS6035819B2 (ja
Inventor
Katsumi Suzuki
Toshitaka Torikai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55151807A priority Critical patent/JPS6035819B2/ja
Publication of JPS5775427A publication Critical patent/JPS5775427A/ja
Publication of JPS6035819B2 publication Critical patent/JPS6035819B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP55151807A 1980-10-29 1980-10-29 Ｘ線露光用マスクの製造方法 Expired JPS6035819B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55151807A JPS6035819B2 (ja) 1980-10-29 1980-10-29 Ｘ線露光用マスクの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55151807A JPS6035819B2 (ja) 1980-10-29 1980-10-29 Ｘ線露光用マスクの製造方法

Publications (2)

Publication Number Publication Date
JPS5775427A true JPS5775427A (en) 1982-05-12
JPS6035819B2 JPS6035819B2 (ja) 1985-08-16

Family

ID=15526730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55151807A Expired JPS6035819B2 (ja) 1980-10-29 1980-10-29 Ｘ線露光用マスクの製造方法

Country Status (1)

Country Link
JP (1) JPS6035819B2 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59116750A (ja) * 1982-12-11 1984-07-05 ユ−ロジル・エレクトロニツク・ゲ−エムベ−ハ− Ｘ線リトグラフイ用放射線マスク基層およびその製法
JPS59129851A (ja) * 1983-01-17 1984-07-26 Nec Corp Ｘ線露光用マスクの製造方法
JPS6061750A (ja) * 1983-09-16 1985-04-09 Nec Corp Ｘ線露光マスクの製造方法
WO2007037094A1 (en) * 2005-09-29 2007-04-05 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device with nitride and oxide layers

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59116750A (ja) * 1982-12-11 1984-07-05 ユ−ロジル・エレクトロニツク・ゲ−エムベ−ハ− Ｘ線リトグラフイ用放射線マスク基層およびその製法
JPS59129851A (ja) * 1983-01-17 1984-07-26 Nec Corp Ｘ線露光用マスクの製造方法
JPS6061750A (ja) * 1983-09-16 1985-04-09 Nec Corp Ｘ線露光マスクの製造方法
WO2007037094A1 (en) * 2005-09-29 2007-04-05 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device with nitride and oxide layers
JP2007123825A (ja) * 2005-09-29 2007-05-17 Toshiba Corp 半導体装置の製造方法
US7772129B2 (en) 2005-09-29 2010-08-10 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device
US8557717B2 (en) 2005-09-29 2013-10-15 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device

Also Published As

Publication number Publication date
JPS6035819B2 (ja) 1985-08-16

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