JPS5775427A - Manufacture of mask for exposure to x-ray - Google Patents
Manufacture of mask for exposure to x-rayInfo
- Publication number
- JPS5775427A JPS5775427A JP15180780A JP15180780A JPS5775427A JP S5775427 A JPS5775427 A JP S5775427A JP 15180780 A JP15180780 A JP 15180780A JP 15180780 A JP15180780 A JP 15180780A JP S5775427 A JPS5775427 A JP S5775427A
- Authority
- JP
- Japan
- Prior art keywords
- si3n4 film
- sih4
- mask
- ray
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 2
- 230000005284 excitation Effects 0.000 abstract 1
- 230000035897 transcription Effects 0.000 abstract 1
- 238000013518 transcription Methods 0.000 abstract 1
- 238000001947 vapour-phase growth Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55151807A JPS6035819B2 (ja) | 1980-10-29 | 1980-10-29 | X線露光用マスクの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55151807A JPS6035819B2 (ja) | 1980-10-29 | 1980-10-29 | X線露光用マスクの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5775427A true JPS5775427A (en) | 1982-05-12 |
JPS6035819B2 JPS6035819B2 (ja) | 1985-08-16 |
Family
ID=15526730
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55151807A Expired JPS6035819B2 (ja) | 1980-10-29 | 1980-10-29 | X線露光用マスクの製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6035819B2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59116750A (ja) * | 1982-12-11 | 1984-07-05 | ユ−ロジル・エレクトロニツク・ゲ−エムベ−ハ− | X線リトグラフイ用放射線マスク基層およびその製法 |
JPS59129851A (ja) * | 1983-01-17 | 1984-07-26 | Nec Corp | X線露光用マスクの製造方法 |
JPS6061750A (ja) * | 1983-09-16 | 1985-04-09 | Nec Corp | X線露光マスクの製造方法 |
WO2007037094A1 (en) * | 2005-09-29 | 2007-04-05 | Kabushiki Kaisha Toshiba | Method for manufacturing a semiconductor device with nitride and oxide layers |
-
1980
- 1980-10-29 JP JP55151807A patent/JPS6035819B2/ja not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59116750A (ja) * | 1982-12-11 | 1984-07-05 | ユ−ロジル・エレクトロニツク・ゲ−エムベ−ハ− | X線リトグラフイ用放射線マスク基層およびその製法 |
JPS59129851A (ja) * | 1983-01-17 | 1984-07-26 | Nec Corp | X線露光用マスクの製造方法 |
JPS6061750A (ja) * | 1983-09-16 | 1985-04-09 | Nec Corp | X線露光マスクの製造方法 |
WO2007037094A1 (en) * | 2005-09-29 | 2007-04-05 | Kabushiki Kaisha Toshiba | Method for manufacturing a semiconductor device with nitride and oxide layers |
JP2007123825A (ja) * | 2005-09-29 | 2007-05-17 | Toshiba Corp | 半導体装置の製造方法 |
US7772129B2 (en) | 2005-09-29 | 2010-08-10 | Kabushiki Kaisha Toshiba | Method for manufacturing a semiconductor device |
US8557717B2 (en) | 2005-09-29 | 2013-10-15 | Kabushiki Kaisha Toshiba | Method for manufacturing a semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6035819B2 (ja) | 1985-08-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4174251A (en) | Method of selective gas etching on a silicon nitride layer | |
EP0139134A3 (en) | Deposition and diffusion source control means and method | |
JPS57167631A (en) | Plasma vapor-phase growing method | |
JPS5775427A (en) | Manufacture of mask for exposure to x-ray | |
JPS5421172A (en) | Manufacture for semiconductor device | |
JPS5444870A (en) | Manufacture of semiconductor device | |
JPS57187936A (en) | Manufacture of 3-5 family compound semiconductor element | |
JPS54112790A (en) | Source boat for vapor phase growth of compound semiconductor | |
JPS5460858A (en) | Manufacture of gallium arsenide crystal wafer | |
JPS5267260A (en) | Manufacture of iii-v group compounds semiconductor epitaxial laminatio n crystal | |
JPS55115375A (en) | Light detector element | |
JPS54109767A (en) | Forming method of amorphous semiconductor layer | |
JPS55164077A (en) | Method for etching by gas plasma | |
JPS5637647A (en) | Manufacturing of semiconductor device | |
JPS5449063A (en) | Semiconductor device and its manufacture | |
JPS57134936A (en) | Forming method of insulation film on compound semiconductor | |
JPS544567A (en) | Growing apparatus of ion beam crystal | |
JPS5475275A (en) | Manufacture of semiconductor device | |
JPS5376758A (en) | Plasma etching method | |
JPS5740939A (en) | P-n junction formation | |
JPS52112281A (en) | Manufacture of semiconductor | |
JPS5425670A (en) | Gas etching method for iii-v group chemical compound semiconductor | |
JPS5255471A (en) | Impurity doping method of gallium arsenide vapor growth crystal | |
JPS55130129A (en) | Manufacture of epitaxially grown wafer | |
JPS5622942A (en) | Diffraction grating and its manufacture |