JPS5773980A - Semiconductor pressure converter - Google Patents
Semiconductor pressure converterInfo
- Publication number
- JPS5773980A JPS5773980A JP15017880A JP15017880A JPS5773980A JP S5773980 A JPS5773980 A JP S5773980A JP 15017880 A JP15017880 A JP 15017880A JP 15017880 A JP15017880 A JP 15017880A JP S5773980 A JPS5773980 A JP S5773980A
- Authority
- JP
- Japan
- Prior art keywords
- base
- ceramic
- hole
- substrate
- secured
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
PURPOSE:To obtain a long-term stable sensor by forming a through hold at a base substrate when an Si base having a through hole at the center and a reduced pressure pellet on the surface is secured to a ceramic base substrate, forming a recess corresponding to the bottom surface of the Si base and filling solder glass for bonding. CONSTITUTION:A pressure sensitive pellet 54 sensing the pressure is secured onto a cylindrical Si base 56 having a through hole at the center. An annular insulating substrate 51 made of ceramic and an annular insulating substrate 51 made of ceramic having a conductive layer on the surface are formed on the base substrate 53 of ceramic package, and the base 56 thus formed is secured from the surface in sequence by the following method. That is, a through hole corresponding to the through hole of the base 56 is formed at the base 53, and a concentric recess 57 is formed at the periphery. Thereafter solder glass 58 is filled while filling in the recess 57 to the side wall 59, thereby securing the bottom of the base 56.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15017880A JPS5773980A (en) | 1980-10-28 | 1980-10-28 | Semiconductor pressure converter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15017880A JPS5773980A (en) | 1980-10-28 | 1980-10-28 | Semiconductor pressure converter |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5773980A true JPS5773980A (en) | 1982-05-08 |
Family
ID=15491204
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15017880A Pending JPS5773980A (en) | 1980-10-28 | 1980-10-28 | Semiconductor pressure converter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5773980A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016511401A (en) * | 2013-02-21 | 2016-04-14 | エプコス アクチエンゲゼルシャフトEpcos Ag | Sensor system |
JP2016514254A (en) * | 2013-02-21 | 2016-05-19 | エプコス アクチエンゲゼルシャフトEpcos Ag | Pressure sensor system |
-
1980
- 1980-10-28 JP JP15017880A patent/JPS5773980A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016511401A (en) * | 2013-02-21 | 2016-04-14 | エプコス アクチエンゲゼルシャフトEpcos Ag | Sensor system |
JP2016514254A (en) * | 2013-02-21 | 2016-05-19 | エプコス アクチエンゲゼルシャフトEpcos Ag | Pressure sensor system |
US9909946B2 (en) | 2013-02-21 | 2018-03-06 | Epcos Ag | Pressure sensor system |
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