JPS5771145A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS5771145A JPS5771145A JP56055324A JP5532481A JPS5771145A JP S5771145 A JPS5771145 A JP S5771145A JP 56055324 A JP56055324 A JP 56055324A JP 5532481 A JP5532481 A JP 5532481A JP S5771145 A JPS5771145 A JP S5771145A
- Authority
- JP
- Japan
- Prior art keywords
- film
- opening
- region
- diffused layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To reduce mask work in fabrication of an MOSIC and to improve yield by such a configuration that two FETs connected in series with a common region which is side of regions of a reverse conduction type, are surrounded by an insulated isolation region having a channel stopping layer. CONSTITUTION:For example on a P type substrate 6 an alumina film 7 of a thickness around 2,000Angstrom is attached, an opening is prepared, and a diffused layer 5 and a thick oxide film 8 is selectively formed on the opening. Next after an N type diffused layer 3-3'' is formed, through forming an opening on a source and drain region of the film 7, a gate film 9, 9' is formed by selective removal of the film 7 with a chromate solution. Continuously an opening is formed on a contacting region, a wiring layer 10-10' for electrode is formed, and a configuration in which FET1 and FET2 are connected in series having a common diffused layer 3' is taken. By this constitution a mask process in a gate film formation can be made unnecessary, and one of optical processes can be eliminated on the whole. In addition an Si nitrate film or the like can be utilized as a mask for selective diffusion and oxidation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56055324A JPS5771145A (en) | 1981-04-13 | 1981-04-13 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56055324A JPS5771145A (en) | 1981-04-13 | 1981-04-13 | Semiconductor integrated circuit device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1517971A Division JPS5528229B1 (en) | 1971-03-19 | 1971-03-19 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58147063A Division JPS5963740A (en) | 1983-08-10 | 1983-08-10 | Semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5771145A true JPS5771145A (en) | 1982-05-01 |
Family
ID=12995357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56055324A Pending JPS5771145A (en) | 1981-04-13 | 1981-04-13 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5771145A (en) |
-
1981
- 1981-04-13 JP JP56055324A patent/JPS5771145A/en active Pending
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