JPS5767010A - Etching method for indium-phosphorus crystal - Google Patents
Etching method for indium-phosphorus crystalInfo
- Publication number
- JPS5767010A JPS5767010A JP14303080A JP14303080A JPS5767010A JP S5767010 A JPS5767010 A JP S5767010A JP 14303080 A JP14303080 A JP 14303080A JP 14303080 A JP14303080 A JP 14303080A JP S5767010 A JPS5767010 A JP S5767010A
- Authority
- JP
- Japan
- Prior art keywords
- concd
- etched
- crystal
- region
- equal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To etch selectively and accurately an InP crystal covered with an ethcing mask by using a mixed aqueous soln. of concd. bromic acid and concd. nitric acid almost equal to each other in volume.
CONSTITUTION: An etching mask 3 made of thin dielectric film or photoresist is formed selectively on an InP crystal 1, and the region 2 of the crystal 1 to be etched is etched selectively with a mixed aqueous soln. of concd. bromic acid and concd, nitric acid almost equal to each other in volume. Thus, the crystal 1 is etched only in the perpendicular direction, and no etching proceeds in the lateral direction, so the etched region 6 has an opening part equal to the region 2 in area. Accordingly, a high frequency diode with a micropattern or a transistor can be worked simply and accurately.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14303080A JPS5767010A (en) | 1980-10-15 | 1980-10-15 | Etching method for indium-phosphorus crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14303080A JPS5767010A (en) | 1980-10-15 | 1980-10-15 | Etching method for indium-phosphorus crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5767010A true JPS5767010A (en) | 1982-04-23 |
Family
ID=15329268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14303080A Pending JPS5767010A (en) | 1980-10-15 | 1980-10-15 | Etching method for indium-phosphorus crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5767010A (en) |
-
1980
- 1980-10-15 JP JP14303080A patent/JPS5767010A/en active Pending
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