JPS5767010A - Etching method for indium-phosphorus crystal - Google Patents

Etching method for indium-phosphorus crystal

Info

Publication number
JPS5767010A
JPS5767010A JP14303080A JP14303080A JPS5767010A JP S5767010 A JPS5767010 A JP S5767010A JP 14303080 A JP14303080 A JP 14303080A JP 14303080 A JP14303080 A JP 14303080A JP S5767010 A JPS5767010 A JP S5767010A
Authority
JP
Japan
Prior art keywords
concd
etched
crystal
region
equal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14303080A
Other languages
Japanese (ja)
Inventor
Masao Ida
Sukenori Imai
Tadao Ishibashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14303080A priority Critical patent/JPS5767010A/en
Publication of JPS5767010A publication Critical patent/JPS5767010A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To etch selectively and accurately an InP crystal covered with an ethcing mask by using a mixed aqueous soln. of concd. bromic acid and concd. nitric acid almost equal to each other in volume.
CONSTITUTION: An etching mask 3 made of thin dielectric film or photoresist is formed selectively on an InP crystal 1, and the region 2 of the crystal 1 to be etched is etched selectively with a mixed aqueous soln. of concd. bromic acid and concd, nitric acid almost equal to each other in volume. Thus, the crystal 1 is etched only in the perpendicular direction, and no etching proceeds in the lateral direction, so the etched region 6 has an opening part equal to the region 2 in area. Accordingly, a high frequency diode with a micropattern or a transistor can be worked simply and accurately.
COPYRIGHT: (C)1982,JPO&Japio
JP14303080A 1980-10-15 1980-10-15 Etching method for indium-phosphorus crystal Pending JPS5767010A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14303080A JPS5767010A (en) 1980-10-15 1980-10-15 Etching method for indium-phosphorus crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14303080A JPS5767010A (en) 1980-10-15 1980-10-15 Etching method for indium-phosphorus crystal

Publications (1)

Publication Number Publication Date
JPS5767010A true JPS5767010A (en) 1982-04-23

Family

ID=15329268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14303080A Pending JPS5767010A (en) 1980-10-15 1980-10-15 Etching method for indium-phosphorus crystal

Country Status (1)

Country Link
JP (1) JPS5767010A (en)

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