JPS5764977A - Manufactue of p-n junction gate type field effect transistor - Google Patents

Manufactue of p-n junction gate type field effect transistor

Info

Publication number
JPS5764977A
JPS5764977A JP55141342A JP14134280A JPS5764977A JP S5764977 A JPS5764977 A JP S5764977A JP 55141342 A JP55141342 A JP 55141342A JP 14134280 A JP14134280 A JP 14134280A JP S5764977 A JPS5764977 A JP S5764977A
Authority
JP
Japan
Prior art keywords
layer
gaas
type
junction
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55141342A
Other languages
English (en)
Japanese (ja)
Other versions
JPH023541B2 (enrdf_load_stackoverflow
Inventor
Ryuichiro Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55141342A priority Critical patent/JPS5764977A/ja
Publication of JPS5764977A publication Critical patent/JPS5764977A/ja
Publication of JPH023541B2 publication Critical patent/JPH023541B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP55141342A 1980-10-09 1980-10-09 Manufactue of p-n junction gate type field effect transistor Granted JPS5764977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55141342A JPS5764977A (en) 1980-10-09 1980-10-09 Manufactue of p-n junction gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55141342A JPS5764977A (en) 1980-10-09 1980-10-09 Manufactue of p-n junction gate type field effect transistor

Publications (2)

Publication Number Publication Date
JPS5764977A true JPS5764977A (en) 1982-04-20
JPH023541B2 JPH023541B2 (enrdf_load_stackoverflow) 1990-01-24

Family

ID=15289724

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55141342A Granted JPS5764977A (en) 1980-10-09 1980-10-09 Manufactue of p-n junction gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5764977A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6173377A (ja) * 1984-09-18 1986-04-15 Sony Corp Ｆｅｔの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6173377A (ja) * 1984-09-18 1986-04-15 Sony Corp Ｆｅｔの製造方法

Also Published As

Publication number Publication date
JPH023541B2 (enrdf_load_stackoverflow) 1990-01-24

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