JPS5762542A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5762542A
JPS5762542A JP55137912A JP13791280A JPS5762542A JP S5762542 A JPS5762542 A JP S5762542A JP 55137912 A JP55137912 A JP 55137912A JP 13791280 A JP13791280 A JP 13791280A JP S5762542 A JPS5762542 A JP S5762542A
Authority
JP
Japan
Prior art keywords
film
pattern
aluminum
protective film
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55137912A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6217862B2 (enrdf_load_stackoverflow
Inventor
Satoru Maeda
Hiroshi Iwai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55137912A priority Critical patent/JPS5762542A/ja
Priority to US06/307,877 priority patent/US4560421A/en
Publication of JPS5762542A publication Critical patent/JPS5762542A/ja
Publication of JPS6217862B2 publication Critical patent/JPS6217862B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76294—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using selective deposition of single crystal silicon, i.e. SEG techniques

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Drying Of Semiconductors (AREA)
  • Element Separation (AREA)
JP55137912A 1980-10-02 1980-10-02 Manufacture of semiconductor device Granted JPS5762542A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP55137912A JPS5762542A (en) 1980-10-02 1980-10-02 Manufacture of semiconductor device
US06/307,877 US4560421A (en) 1980-10-02 1981-10-02 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55137912A JPS5762542A (en) 1980-10-02 1980-10-02 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5762542A true JPS5762542A (en) 1982-04-15
JPS6217862B2 JPS6217862B2 (enrdf_load_stackoverflow) 1987-04-20

Family

ID=15209580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55137912A Granted JPS5762542A (en) 1980-10-02 1980-10-02 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5762542A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9269765B2 (en) 2013-10-21 2016-02-23 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device having gate wire disposed on roughened field insulating film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9269765B2 (en) 2013-10-21 2016-02-23 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device having gate wire disposed on roughened field insulating film

Also Published As

Publication number Publication date
JPS6217862B2 (enrdf_load_stackoverflow) 1987-04-20

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