JPS5760876A - Avalanche photodiode - Google Patents

Avalanche photodiode

Info

Publication number
JPS5760876A
JPS5760876A JP55136284A JP13628480A JPS5760876A JP S5760876 A JPS5760876 A JP S5760876A JP 55136284 A JP55136284 A JP 55136284A JP 13628480 A JP13628480 A JP 13628480A JP S5760876 A JPS5760876 A JP S5760876A
Authority
JP
Japan
Prior art keywords
layer
impurity
center
concentration
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55136284A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0258791B2 (enrdf_load_stackoverflow
Inventor
Katsuhiko Nishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55136284A priority Critical patent/JPS5760876A/ja
Publication of JPS5760876A publication Critical patent/JPS5760876A/ja
Publication of JPH0258791B2 publication Critical patent/JPH0258791B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures

Landscapes

  • Light Receiving Elements (AREA)
JP55136284A 1980-09-30 1980-09-30 Avalanche photodiode Granted JPS5760876A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55136284A JPS5760876A (en) 1980-09-30 1980-09-30 Avalanche photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55136284A JPS5760876A (en) 1980-09-30 1980-09-30 Avalanche photodiode

Publications (2)

Publication Number Publication Date
JPS5760876A true JPS5760876A (en) 1982-04-13
JPH0258791B2 JPH0258791B2 (enrdf_load_stackoverflow) 1990-12-10

Family

ID=15171573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55136284A Granted JPS5760876A (en) 1980-09-30 1980-09-30 Avalanche photodiode

Country Status (1)

Country Link
JP (1) JPS5760876A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60196979A (ja) * 1984-03-21 1985-10-05 Nec Corp 半導体装置
US5438217A (en) * 1994-04-29 1995-08-01 General Electric Company Planar avalanche photodiode array with sidewall segment
US5670383A (en) * 1994-04-04 1997-09-23 General Electric Company Method for fabrication of deep-diffused avalanche photodiode

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTER *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60196979A (ja) * 1984-03-21 1985-10-05 Nec Corp 半導体装置
US5670383A (en) * 1994-04-04 1997-09-23 General Electric Company Method for fabrication of deep-diffused avalanche photodiode
US5438217A (en) * 1994-04-29 1995-08-01 General Electric Company Planar avalanche photodiode array with sidewall segment
US5500376A (en) * 1994-04-29 1996-03-19 General Electric Company Method for fabricating planar avalanche photodiode array

Also Published As

Publication number Publication date
JPH0258791B2 (enrdf_load_stackoverflow) 1990-12-10

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