JPH0258791B2 - - Google Patents
Info
- Publication number
- JPH0258791B2 JPH0258791B2 JP55136284A JP13628480A JPH0258791B2 JP H0258791 B2 JPH0258791 B2 JP H0258791B2 JP 55136284 A JP55136284 A JP 55136284A JP 13628480 A JP13628480 A JP 13628480A JP H0258791 B2 JPH0258791 B2 JP H0258791B2
- Authority
- JP
- Japan
- Prior art keywords
- junction
- layer
- concentration
- guard ring
- impurity concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55136284A JPS5760876A (en) | 1980-09-30 | 1980-09-30 | Avalanche photodiode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55136284A JPS5760876A (en) | 1980-09-30 | 1980-09-30 | Avalanche photodiode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5760876A JPS5760876A (en) | 1982-04-13 |
| JPH0258791B2 true JPH0258791B2 (enrdf_load_stackoverflow) | 1990-12-10 |
Family
ID=15171573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55136284A Granted JPS5760876A (en) | 1980-09-30 | 1980-09-30 | Avalanche photodiode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5760876A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60196979A (ja) * | 1984-03-21 | 1985-10-05 | Nec Corp | 半導体装置 |
| US5446308A (en) * | 1994-04-04 | 1995-08-29 | General Electric Company | Deep-diffused planar avalanche photodiode |
| US5438217A (en) * | 1994-04-29 | 1995-08-01 | General Electric Company | Planar avalanche photodiode array with sidewall segment |
-
1980
- 1980-09-30 JP JP55136284A patent/JPS5760876A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| APPLIED PHYSICS LETTER * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5760876A (en) | 1982-04-13 |
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