JPH0231509B2 - - Google Patents
Info
- Publication number
- JPH0231509B2 JPH0231509B2 JP56084000A JP8400081A JPH0231509B2 JP H0231509 B2 JPH0231509 B2 JP H0231509B2 JP 56084000 A JP56084000 A JP 56084000A JP 8400081 A JP8400081 A JP 8400081A JP H0231509 B2 JPH0231509 B2 JP H0231509B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- semiconductor layer
- type
- guard ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
Landscapes
- Light Receiving Elements (AREA)
- Radiation Pyrometers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56084000A JPS57198668A (en) | 1981-06-01 | 1981-06-01 | Light receiving element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56084000A JPS57198668A (en) | 1981-06-01 | 1981-06-01 | Light receiving element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57198668A JPS57198668A (en) | 1982-12-06 |
| JPH0231509B2 true JPH0231509B2 (enrdf_load_stackoverflow) | 1990-07-13 |
Family
ID=13818254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56084000A Granted JPS57198668A (en) | 1981-06-01 | 1981-06-01 | Light receiving element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57198668A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6285832A (ja) * | 1985-10-11 | 1987-04-20 | Mitsubishi Cable Ind Ltd | 光学式温度計 |
| JPS63224252A (ja) * | 1987-02-06 | 1988-09-19 | シーメンス、アクチエンゲゼルシヤフト | 導波路−ホトダイオードアレー |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2311408A1 (fr) * | 1975-05-16 | 1976-12-10 | Thomson Csf | Photodiode a avalanche |
| JPS5513990A (en) * | 1978-07-18 | 1980-01-31 | Nec Corp | Semiconductor device |
| JPS5572084A (en) * | 1978-11-27 | 1980-05-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor photo-detector |
-
1981
- 1981-06-01 JP JP56084000A patent/JPS57198668A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57198668A (en) | 1982-12-06 |
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