JPS5750480A - Constant voltage diode - Google Patents

Constant voltage diode

Info

Publication number
JPS5750480A
JPS5750480A JP12668380A JP12668380A JPS5750480A JP S5750480 A JPS5750480 A JP S5750480A JP 12668380 A JP12668380 A JP 12668380A JP 12668380 A JP12668380 A JP 12668380A JP S5750480 A JPS5750480 A JP S5750480A
Authority
JP
Japan
Prior art keywords
constant voltage
voltage diode
type region
breakdown voltage
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12668380A
Other languages
English (en)
Inventor
Masaru Okumura
Kimii Sumino
Miyuki Kawasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Fuji Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Fuji Electric Manufacturing Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP12668380A priority Critical patent/JPS5750480A/ja
Publication of JPS5750480A publication Critical patent/JPS5750480A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
JP12668380A 1980-09-12 1980-09-12 Constant voltage diode Pending JPS5750480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12668380A JPS5750480A (en) 1980-09-12 1980-09-12 Constant voltage diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12668380A JPS5750480A (en) 1980-09-12 1980-09-12 Constant voltage diode

Publications (1)

Publication Number Publication Date
JPS5750480A true JPS5750480A (en) 1982-03-24

Family

ID=14941267

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12668380A Pending JPS5750480A (en) 1980-09-12 1980-09-12 Constant voltage diode

Country Status (1)

Country Link
JP (1) JPS5750480A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63244763A (ja) * 1987-03-31 1988-10-12 Toshiba Corp 不揮発性半導体記憶装置
WO1993026048A1 (en) * 1992-06-16 1993-12-23 Citizen Watch Co., Ltd. Pn junction diode and its manufacture method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63244763A (ja) * 1987-03-31 1988-10-12 Toshiba Corp 不揮発性半導体記憶装置
WO1993026048A1 (en) * 1992-06-16 1993-12-23 Citizen Watch Co., Ltd. Pn junction diode and its manufacture method

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